Oriented Growth of Semiconductors. III. Growth of Gallium Arsenide on Germanium

Bobb, L. C.; Holloway, H.; Maxwell, K. H.; Zimmerman, E.

doi:10.1063/1.1708118

Cited by 58 publications

(11 citation statements)

References 20 publications

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“…The upright and inverted twins of Neave et al [6] recently observed antiphase domains in epitaxial GaAs films grown on germanium {001} substrates, confirming an earlier report [5]. They suggested a nucleation mechanism based on the fact that the first monolayer deposited on germanium during growth is always arsenic.…”

Section: [110]supporting

confidence: 50%

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Polarity reversal and symmetry in semiconducting compounds with the sphalerite and wurtzite structures

Holt

1984

J Mater Sci

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The evidence for the occurrence of polarity reversal domains and inversion twins in compounds with the wurtzite and sphalerite structures is reviewed. Anti-coincidence lattices are defined for orientation relationships such that a fraction of sites of the two lattices coincide, but wrongly, to produce anti-coincidence sites. Proceeding from Friedel's theorem, the range of Friedel indices, 1, can be extended to unity and negative odd integers. Polarity reversal domains are characterised by / = --1 and n th order inversion twins by / = --(3) n. The partial symmetry operations producing coincidence and anticoincidence lattices are discussed.

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Section: [110]supporting

confidence: 50%

“…The clearest evidence for polarity reversal is the observation of areas of reversed etching polarity on {0001} surfaces of CdS [3], ZnO [4] and on {100} surfaces of epitaxial GaAs grown on germanium [5,6]. This is not solely a surface phenomenon.…”

Section: Polarity Reversalmentioning

confidence: 96%

Polarity reversal and symmetry in semiconducting compounds with the sphalerite and wurtzite structures

Holt

1984

J Mater Sci

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“…ABPs were first considered by Aminoff & Broome (1931). Such defects in compound semiconductors were discussed by Holt (1969) referring to an experimental study of defects in GaAs grown on Ge (Bobb et al ., 1966). Because of the technological interest in the growth of GaAs on Si and Ge for opto‐electronic and photovoltaic applications (Carter et al ., 1986; Sieg et al ., 1998; Ting et al ., 1998; Xu & Hsu, 1999a; Ting & Fitzgerald, 2000), the structure of APBs in compound semiconductors has since been the subject of numerous experimental studies (Ebert et al ., 1962; Holt et al ., 1996; Bowler & Goringe, 1998; Xu & Hsu, 1999b; Hudait & Krupanidhi, 2000).…”

Section: Introductionmentioning

confidence: 99%

Structure of the (110) antiphase boundary in gallium phosphide

Cohen

Carter

2002

Journal of Microscopy

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SummaryThe morphology of antiphase boundaries in GaP films grown by molecular beam epitaxy on Si (001) has been studied by transmission electron microscopy. The inversion of the crystal polarity between antiphase domains was confirmed by convergent-beam electron diffraction. The APBs were often found to facet parallel to {110} planes. Strong-beam α -fringe contrast observed along the (110) facets indicates that adjacent antiphase domains are related by an additional rigid-body lattice translation. Diffraction-contrast analysis shows that this R corresponds to a shear parallel to the [001] direction and a small expansion. The magnitude of the translation was inferred, quantitatively, through a comparison between energy-filtered zero-loss images of the α -fringe contrast with numerical calculations. The components of the rigid-body lattice translation were determined to be 0.023 ± 0.0033 nm in the [001] direction and 0.005 ± 0.002 nm in the !! 0 direction. Based upon a geometric model of the {110} antiphase boundary, the lengths of the Ga and P antisite bonds were calculated to be 254 ± 2 pm and 227 ± 4 pm, respectively.

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“…In particular, vicinal Ge͑100͒ should provide a good template for GaAs growth. However, even after 30 years of study, 1 there is still no fundamental understanding of the nucleation of GaAs on Ge. Instead, peculiar dependencies associated with growth chamber design and substrate processing history are observed.…”

Section: Introductionmentioning

confidence: 99%

Atomic-resolution study of steps and ridges on arsine-exposed vicinal Ge(100)

McMahon

Olson

1999

Phys. Rev. B

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Scanning tunneling microscope images of steps on AsH 3 -exposed vicinal Ge͑100͒ show very clearly that As/Ge steps reconstruct. A variety of As/Ge structures based on a ''double-row'' step reconstruction has been observed. We present and discuss some examples, and propose a structural model for a representative twolayer double-row As/Ge step. Under some conditions, we find that atomic-scale ridges are formed at the edges of terraces. These ridges are formed when arsine etching preferentially removes terrace atoms, leaving the steps intact. The resulting ridges are therefore simply the remnants of etch-resistant steps. An atomic-scale model for this process is proposed, and some consequences of ridge formation are discussed. ͓S0163-1829͑99͒06727-2͔

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Oriented Growth of Semiconductors. III. Growth of Gallium Arsenide on Germanium

Cited by 58 publications

References 20 publications

Polarity reversal and symmetry in semiconducting compounds with the sphalerite and wurtzite structures

Polarity reversal and symmetry in semiconducting compounds with the sphalerite and wurtzite structures

Structure of the (110) antiphase boundary in gallium phosphide

Atomic-resolution study of steps and ridges on arsine-exposed vicinal Ge(100)

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