“…Flash lamp annealing (FLA), in the range of 400 μs to 20 ms [26,27], has been confirmed as a useful technology to recrystallize ion-implanted semiconductors, e.g. GaAs 1−x N x [28,29], Ga 1−x Mn x As [30,31], hyper-doped Si [32,33], etc. Interestingly, according to a study by Potzger et al, α-Fe nanoparticles formed during FLA of Fe-implanted ZnO, opening a new avenue to induce TM-rich nanocluster formation in semiconductor matrices [34][35][36][37] also by FLA.…”