2017
DOI: 10.1088/1361-6463/aa840f
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Origin and role of gap states in organic semiconductor studied by UPS: as the nature of organic molecular crystals

Abstract: This article reviews experimental studies on 'bridging electronic structure and charge transport property of organic semiconductors' performed using ultraviolet photoelectron spectroscopy (UPS) and related methods mainly in Chiba University, Japan, in particular on the investigation of the origin and the role of electronic states existing in the highest occupied molecular orbital bandlowest unoccupied molecular orbital band (HOMO-LUMO) gap. We summarize experimental observations including direct measurements o… Show more

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Cited by 112 publications
(156 citation statements)
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“…The topic of electronic traps in organic semiconductors has been reviewed by Saleo et al and by Ueno et al The general and salient observations are presented and discussed below. Persistent structural defects of the crystal structures of organic semiconductors cause static disorder that hinder charge transport by creating deep traps .…”
Section: Charge Transportmentioning
confidence: 99%
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“…The topic of electronic traps in organic semiconductors has been reviewed by Saleo et al and by Ueno et al The general and salient observations are presented and discussed below. Persistent structural defects of the crystal structures of organic semiconductors cause static disorder that hinder charge transport by creating deep traps .…”
Section: Charge Transportmentioning
confidence: 99%
“…The current picture is oversimplified. In reality, charges are delocalized over several molecules and the overall density of states of the entire sample and its Fermi–Dirac occupation determine doping efficiency . Dopant density also determines doping efficiency because additional ionized dopants favor charge separation .…”
Section: Charge Transportmentioning
confidence: 99%
See 1 more Smart Citation
“…(More detailed descriptions are given in Note S5, Supporting Information.) [41][42][43][44][45][46][47][48][49][50] As depicted in N e (E) of Figure 5b, when E F is approaching from 0 to +0.8 eV beyond the unoccupied DOS, |S e | increases through the peak and decreases again due to the trade-off between the former term and the latter term in Equation (1), [42][43][44] which is matched with the regions of I to IV corresponding to annealing temperatures as shown in Figure 5a. The annealing temperature dependence of S and σ and the electronic state obtained in the experiment from Figures 4 and 5a are in good agreement with those shown in Figure 5b.…”
Section: As Shown Inmentioning
confidence: 99%
“…This type of interface is characterized by weak interaction, i.e., physisorption, in contrast to the hybridized, more strongly interacting interfaces typically formed upon vacuum deposition. Readers interested in interfaces of vacuum‐deposited OSC molecules are referred to, e.g., these review papers …”
Section: Introductionmentioning
confidence: 99%