Origin of 1/f^3/2noise in GaAs thin-film resistors and MESFET's

Correlation between fluctuating conductivity of the channel, transconductance dispersion and noise of a MESFET

“…The theoretical analysis is based on a model of surface thermal noise in GaAs MESFETs [13]. The model assumes that lumped thermal noise generators are distributed along the semiconductor-dielectric protection interface, and that the electrical dynamic behaviour of the GaAs surface can be described by the lumped circuit of figure 1.…”

“…In this figure, each network consisting of C and R is the consequence of the dynamics of the surface states, where R is the surface leakage resistance per unit length at the surface [8] and C is the surface capacitance per unit length (equal to the sum of the frequency-dependent surface trap capacitance and the surface depletion capacitance). R and C depend to a great extent on the technological process involved, but they usually range between (for width Z = 1 mm) [13] 0.1 < R(G /µm) < 400 3 < C(fF/µm) < 1000.…”

A conductance DLTS system to analyse multiple exponential decays

“…This model requires a non-zero surface conductance to control the surface potential distribution. The same model can also explain the low-frequency dispersion of the mutual conductance [20-221 and the low-frequency noise [23].…”

3D Numerical Modeling and Extraction of Noise Parameters of Uniformly Doped Metal-Semiconductor Field Effect Transistor Photodetector

“…The correlation between the noise sources is included by using an additional model parameter-complex correlation coefficient. Michel Pouysegur et al 8 addressed the problem of l/f 3/2 low-frequency noise in GaAs MESFET's. They proposed a new surface thermal-noise model based on the existence of lumped thermal noise generators.…”