Origin of Anomalous Electronic Structures of Epitaxial Graphene on Silicon Carbide

Kim, Seungchul; Ihm, Jisoon; Choi, Hyoung Joon; Son, Young Kap

doi:10.1103/physrevlett.100.176802

Cited by 376 publications

(461 citation statements)

References 33 publications

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“…After hydrogen intercalation, the moiré patterns around both the LEED spots of the bulk SiC and the graphene with R0° disappeared, and the LEED pattern of graphene with R30° was observed (see Figure S2d-f in Supporting Information). 27 The hydrogen intercalation suggests 7 that the interface structure is a zeroth-layer graphene with R30°, which is chemically bonded to the bulk SiC.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

et al. 2015

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Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD).However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 ℃ using borazine molecules.Second, when heated above 1150 ℃ in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 ℃ , the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.

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Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

et al. 2015

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“…Between EMG and the SiC substrate, there is an interfacial carbon layer, which has a graphene-like honeycomb lattice and is covalently bonded to the SiC substrate [53,54]. This will change the lattice constant as well as the electronic properties of the substrate.…”

Section: Nano Researchmentioning

confidence: 99%

“…The bulk lattice constant we used for SiC was 3.073 Å [82], while that for graphene was 2.456 Å [83]. It is obvious that the 13 × 13 graphene (31.923 Å) matches the 6R3 lattice (31.935 Å) quite well [53]. On the other hand, the 2 × 2 graphene (4.9 Å) does not match the R3 structure (5.34 Å) (small black circles).…”

Section: Nano Researchmentioning

confidence: 99%

Raman spectroscopy and imaging of graphene

et al. 2008

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Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review recent results on the Raman spectroscopy and imaging of graphene. We show that Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers. The strong Raman signal of single layer graphene compared to graphite is explained by an interference enhancement model. We have also studied the effect of substrates, the top layer deposition, the annealing process, as well as folding (stacking order) on the physical and electronic properties of graphene. Finally, Raman spectroscopy of epitaxial graphene grown on a SiC substrate is presented and strong compressive strain on epitaxial graphene is observed. The results presented here are highly relevant to the application of graphene in nano-electronic devices and help in developing a better understanding of the physical and electronic properties of graphene.

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“…All the calculations are performed using the method based on density functional theory in the local spin density approximation (LSDA) as implemented in the VASP code 8 , which is known to describe the structural and electronic properties of graphite quite well 9,10 . The LSDA results are further checked by the generalized gradient approximation and the results are consistent with each other.…”

Section: Fig 1: (Color Online)mentioning

confidence: 99%

Controlling doping in graphene through a SiC substrate: A first-principles study

2011

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Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather challenge. Based on firstprinciples calculations, a concept of overcoming doping difficulty in graphene via substrate is reported. We find that doping could be strongly enhanced in epitaxial graphene grown on silicon carbide substrate. Compared to free-standing graphene, the formation energies of the dopants can decrease by as much as 8 eV. The type and density of the charge carriers of epitaxial graphene layer can be effectively manipulated by suitable dopants and surface passivation. More importantly, contrasting to the direct doping of graphene, the charge carriers in epitaxial graphene layer are weakly scattered by dopants due to the spatial separation between dopants and conducting channel. Finally, we show that similar idea can also be used to control magnetic properties, e.g., induces a half-metallic state in the epitaxial graphene without magnetic impurity doping.

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Origin of Anomalous Electronic Structures of Epitaxial Graphene on Silicon Carbide

Cited by 376 publications

References 33 publications

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

Raman spectroscopy and imaging of graphene

Controlling doping in graphene through a SiC substrate: A first-principles study

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