2000
DOI: 10.1103/physrevb.61.13573
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Origin of band and localized electron states in photoemission of NiO

Abstract: In a variety of model studies it has been shown that the problem of a single hole in a Mott insulator can be quite well addressed by assuming that all that matters is the interaction between the propagating hole and the spin waves of the insulator. NiO has been often taken as the archetypical example of a Mott insulator and recent angular resolved photoemission studies have revealed that holes in this material share both itinerant and localized aspects that are very hard to understand either in conventional ba… Show more

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Cited by 13 publications
(15 citation statements)
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References 60 publications
(75 reference statements)
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“…These states are rather weakly coupled by the respective hybridization elements, and therefore almost do not contribute to the coherent QP states, as shown in Ref. 19.…”
Section: Spin-fermion Model For Copper Oxidesmentioning
confidence: 86%
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“…These states are rather weakly coupled by the respective hybridization elements, and therefore almost do not contribute to the coherent QP states, as shown in Ref. 19.…”
Section: Spin-fermion Model For Copper Oxidesmentioning
confidence: 86%
“…Two oxygen subbands, (k) with ϭ1,2, are given by the interoxygen hopping processes, and by the three-site hopping terms which originate from the canonical transformation ͑2.4͒, and are ϳt dp /⌬ and ϳt dp /(UϪ⌬). 19 The acoustic magnons branch is given by q ϭ2J(1 Ϫ␥ q 2 ) 1/2 , with ␥ q ϭ(1/z)͚ ␦ e iq␦ (zϭ4 in the 2D case͒. The full expressions for the vertex M k,q and effective oxygen bands (k) can be found in Ref.…”
Section: ͑24͒mentioning
confidence: 99%
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“…Its bulk antiferromagnetic nature lends itself to use in coupled layer magnetic storage media [38], [39] and [40] and the magnetic behavior of NiO nanoparticles is suitable for spin valves important in the rapidly developing fi eld of spintronics [41], [42], [43] and [44]. NiO surface properties have been well investigated [19], [45], [46], [47], [48], [49], [50], [51], [52], [53] and [54] and the band structure [55], [56], [57], [58], [59], [60] and [61] and crystallography of the ideal surface [62] and [63] are well-known. The NiO(1 0 0) cleavage plane [45], [62], [63] and [64] can produce, to within reasonable tolerances, well-ordered, stoichiometric substrates although cleaved surfaces have been reported to contain randomly-spaced step defects, approximately 25-100 nm apart, with the step heights in multiples of 2.1 Å, the Ni-O nearest-neighbor distance [52] and [54].…”
mentioning
confidence: 99%