Origin of Bulk Uniaxial Anisotropy in Zinc-Blende Dilute Magnetic Semiconductors

Birowska, Magdalena; Śliwa, Cezary; Majewski, J. A.; Dietl, T.

doi:10.1103/physrevlett.108.237203

Cited by 58 publications

(62 citation statements)

References 41 publications

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“…The resulting attractive force between the magnetic cations may lead to their aggregation, either at the growth surface during the epitaxial process, as in (Ga,Fe)N (Refs. [4][5][6][7] and for Mn cation dimers in (Ga,Mn)As, 8 or by being triggered by appropriate post-growth high-temperature annealing [9][10][11][12] or high-temperature growth, 13 as observed in (Ga,Mn)As [9][10][11][12] and (Ga,In,Mn)As, 13 respectively. Significantly, in a number of systems, the TM-rich nanocrystals that are formed in this way, such as Fe n N (n≥ 1), [4][5][6][7] MnAs 13 or Co, [14][15][16] do not have a uniform distribution in the film.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy

Kovács

Schaffer

Moreno

et al. 2013

Journal of Applied Physics

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Nanometric inclusions filled with nitrogen, located adjacent to Fe n N (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogencontaining inclusion. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.4 ± 0.3 g/cm 3 . These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of Fe n N (n> 1) nanocrystals during growth.

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Section: Introductionmentioning

confidence: 99%

Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy

Kovács

Schaffer

Moreno

et al. 2013

Journal of Applied Physics

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“…This small spin-orbit effect arises from the lack of centrosymmetry of the zinc-blende lattice * thevenard@insp.jussieu.fr (k 3 Dresselhaus term). A further lowering of the symmetry induced by epitaxial strain (ε) yields a Dresselhaus term linear in k. An even weaker Rashba term, also linear in k, exists due to the nonequivalence of [110] and [110] directions induced during the growth [19], formally equivalent to an in-plane shear strain or an electric field perpendicular to the interface [18]. This is reminiscent of the one encountered in the z-asymmetric metallic stacks mentioned earlier.…”

Section: Introductionmentioning

confidence: 89%

Spin transfer and spin-orbit torques in in-plane magnetized (Ga,Mn)As tracks

et al. 2017

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Current-driven domain wall motion is investigated experimentally in in-plane magnetized (Ga,Mn)As tracks. The wall dynamics is found to differ in two important ways with respect to perpendicularly magnetized (Ga,Mn)As: the wall mobilities are up to ten times higher and the walls move in the same direction as the hole current. We demonstrate that these observations cannot be explained by spin-orbit field torques (Rashba and Dresselhaus types) but are consistent with nonadiabatic spin transfer torque enhanced by the strong spin-orbit coupling of (Ga,Mn)As. This mechanism opens the way to domain wall motion driven by bulk rather than interfacial spin-orbit coupling as in ultrathin ferromagnet/heavy metal multilayers.

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“…In particular, the aggregation of magnetic cations which are either introduced deliberately or present due to contamination, accounts for the high T C values observed in a number of semiconductors and oxides [84,85] . The symmetry lowering associated with this aggregation is also responsible for remarkable magnetic and magnetotransport anisotropy properties of (Ga,Mn)As [86] and (In,Fe)As [87] .…”

Section: Heterogeneities In Magnetic Semiconductorsmentioning

confidence: 99%

Families of magnetic semiconductors — an overview

2019

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The interplay of magnetic and semiconducting properties has been in the focus since more than a half of the century. In this introductory article we briefly review the key properties and functionalities of various magnetic semiconductor families, including europium chalcogenides, chromium spinels, dilute magnetic semiconductors, dilute ferromagnetic semiconductors and insulators, mentioning also sources of non-uniformities in the magnetization distribution, accounting for an apparent high Curie temperature ferromagnetism in many systems. Our survey is carried out from today's perspective of ferromagnetic and antiferromagnetic spintronics as well as of the emerging fields of magnetic topological materials and atomically thin 2D layers.The discovery of ferromagnetism in some europium chalcogenides and chromium spinels a half of the century ago [1] came as a surprise, since insulators typically showed antiferromagnetic or ferrimagnetic spin ordering, driven by a superexchange interaction, whereas ferromagnetism was considered a domain of metals. However, the Goodenough-Kanamori-Anderson rules indicate in which cases the superexchange can lead to ferromagnetic shortrange coupling between localized spins. This mechanism accounts e.g. for Curie temperature T C = 130 K in CdCr 2 Se 4 [2] . In the case of EuO and EuS, the antiferromagnetic superexchange is overcompensated by a direct f -d ferromagnetic exchange, which results in T C = 68 K and 16 K, respectively [3] .Soon after their discovery, magnetic semiconductors were found to exhibit outstanding properties, including *

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Origin of Bulk Uniaxial Anisotropy in Zinc-Blende Dilute Magnetic Semiconductors

Cited by 58 publications

References 41 publications

Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy

Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy

Spin transfer and spin-orbit torques in in-plane magnetized (Ga,Mn)As tracks

Families of magnetic semiconductors — an overview

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