Origin of high mobility within an amorphous polymeric semiconductor: Space-charge-limited current and trap distribution

Chung, Dae Sung; Lee, Dong Hoon; Yang, Choong Jin; Hong, Ki-Sang; Park, Jin Young; Park, Jong Won; Kwon, Soon‐Ki

doi:10.1063/1.2958213

Cited by 51 publications

(26 citation statements)

References 18 publications

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“…We can also see that the variation of F min and C min in this representation can be seen as linear. The variation of F min and C min may be related to the mobility of the charge carriers and its dependence on the bias voltage [18,[24][25][26][27]. In Fig.…”

Section: Resultsmentioning

confidence: 99%

Negative capacitance in Aluminum/hydrogenated amorphous silicon nitride/n type crystalline silicon structure

Mokeddem

Kechouane

2015

Superlattices and Microstructures

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Section: Resultsmentioning

confidence: 99%

Negative capacitance in Aluminum/hydrogenated amorphous silicon nitride/n type crystalline silicon structure

Mokeddem

Kechouane

2015

Superlattices and Microstructures

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“…The exponential dependence of l on ffiffiffi E p was observed in some high-mobility conjugated polymers, 4,[19][20][21]39 and was explained using the Poole-Frenkel model. This model was created many years ago, and first applied to amorphous inorganic semiconductors, 40 and only later to disordered organic semiconductors.…”

Section: Field-dependent Mobilitymentioning

confidence: 94%

“…18 Moreover, exponential dependence of charge carrier mobility (l) on square root of the electric field ( ffiffiffi E p ) was observed in some disordered conjugated polymers. [19][20][21] The cited hole polaron mobility of PEDOT:PSS ranged from 10 À2 to 10 À1 cm 2 V À1 s À1 . 3,22,23 However, to the best of our knowledge neither extensive ESR measurements revealing polaron-bipolaron transformation nor a clear estimation of charge carrier mobility in PEDOT:PSS films has been reported.…”

Section: Introductionmentioning

confidence: 99%

Electron spin resonance and electrical transport in films of poly (3,4-ethylenedioxythiophene) doped with poly(styrenesulphonate)

Lee

You

Jeon

et al. 2015

Journal of Applied Physics

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Articles you may be interested inElectron-phonon coupling modification and carrier mobility enhancement in poly (3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) films by ultraviolet irradiation J. Appl. Phys. 116, 093707 (2014); 10.1063/1.4894836 Direct electrostatic toner marking with poly(3,4-ethylenedioxythiophene)polystyrenesulfonate bilayer devices J. Appl. Phys. 112, 074506 (2012); 10.1063/1.4756041 Carrier transport mechanism of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) films by incorporating ZnO nanoparticles Appl. Phys. Lett. 100, 253302 (2012); 10.1063/1.4730391 Reduced conductivity in poly(3,4-ethylenedioxythiophen)-poly(styrene sulfonate) and indium tin oxide nanocomposite for low indium tin oxide content J. Appl. Phys. 105, 054318 (2009); 10.1063/1.3080154Electronic structure of poly(1,10-phenanthroline-3,8-diyl) and its K-doped state studied by photoelectron spectroscopyWe report electron spin resonance (ESR) and electrical transport measurements in pristine poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulphonate) (PEDOT:PSS) films and ethylene glycol (EG)-treated PEDOT:PSS films. Based on the assumption that ESR from PEDOT:PSS is mainly due to hole polarons, we estimated the polaron mobility in the PEDOT:PSS films as l p % 0:1-1 cm 2 V À1 s À1 . We also estimated that bipolaron mobilities are in the range of approximately 10-100 cm 2 V À1 s À1 , assuming that the initial hole density is unaffected by bipolaron formation. We measured transient currents following application of voltage bias in several films, which had the features of space-charge limited currents despite being measured with coplanar electrodes. The relative nominal mobilities obtained for hole polarons in PEDOT:PSS and for bipolarons in EG-PEDOT:PSS were not inconsistent with the results obtained from the ESR and conductivity measurements. However, although the inferred mobility was voltage-independent for untreated samples with hole polarons, the inferred mobility increased steeply with the applied voltage, consistent with exp ð ffiffiffi ffi V p Þ behavior, for EG-treated samples. V C 2015 AIP Publishing LLC.

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“…[29] The most frequently used method for evaluating charge carrier mobility in bulk heterojunction photovoltaic cells involves fitting the experimental dark I-V curves to the Mott-Gurney equation: [30] J ¼ 9 8…”

Section: à4mentioning

confidence: 99%

Solution‐Processed Organic Photovoltaic Cells with Anthracene Derivatives

Chung¹,

Park²,

Yun³

et al. 2010

ChemSusChem

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Solution-processed small-molecule bulk heterojunction photovoltaic cells are fabricated by using [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) as electron acceptor and triisopropylsilylethynyl anthracene (TIPSAnt) derivatives substituted with naphthalene (TIPSAntNa) and bithiophene (TIPSAntBT) as electron donors. In contrast to TIPS-pentacene, the TIPSAnt derivatives are not susceptible to Diels-Alder reactions with PCBM when processed in solution, as confirmed by UV/Vis measurements. Photoluminescence quenching measurements show exciton diffusion lengths of 5 and 3 nm for TIPSAntBT and TIPSAntNa, respectively. Blending TIPSAntBT and TIPSAntNa with PCBM (1:1, 1:2, 1:3, and 1:4 weight ratios) produces films that possess adequate hole and electron mobilities. The morphological changes that result from varying the blending ratio range from obvious phase-segregated crystalline domains at a 1:1 ratio to homogeneous, nearly amorphous phases at a 1:4 ratio. Bulk heterojunction solar cells prepared by using a TIPSAntBT:PCBM blend reach power conversion efficiencies as high as 1.4 %.

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Origin of high mobility within an amorphous polymeric semiconductor: Space-charge-limited current and trap distribution

Cited by 51 publications

References 18 publications

Negative capacitance in Aluminum/hydrogenated amorphous silicon nitride/n type crystalline silicon structure

Negative capacitance in Aluminum/hydrogenated amorphous silicon nitride/n type crystalline silicon structure

Electron spin resonance and electrical transport in films of poly (3,4-ethylenedioxythiophene) doped with poly(styrenesulphonate)

Solution‐Processed Organic Photovoltaic Cells with Anthracene Derivatives

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