or even the standard gas cooling cycle (50%). [1] First theorized in 1878 by William Thomson, [2] the high-temperature changes (ΔT = 12 K) calculated for ferroelectric (FE) thin films [3] and the discovery of an anomalous electrocaloric effect in anti-ferroelectrics (AFE) [3] have renewed its interest, with an eye put on its potential application as a solid-state cooling solution in integrated circuits.FE materials display what is regarded as the "conventional" electrocaloric effect (or positive electrocaloric effect), whereby the material increases temperature (ΔT > 0) when a voltage step is applied and decreases temperature (ΔT < 0) when it is removed. In contrast, AFE display the opposite response; they decrease temperature (ΔT < 0) when an electric field E is applied, and increase (ΔT > 0) when it is removed. The ability of anti-ferroelectrics to cool down despite electrostatic energy being pumped into them is intriguing, and different underlying mechanisms have been proposed for the negative electrocaloric effect. [4,5] Recent experimental evidence indicates that, in the archetypal anti-ferroelectric PbZrO 3 (PZO), the so-called giant negative electrocaloric effect is due to the latent heat absorbed during the adiabatic-field-induced AFE-FE transition, which is endothermic. [6] In PbZrO 3 , the direct link between the anomalous electrocaloric effect and the first-order anti-ferroelectric-ferroelectric switching implies that the field-induced nucleation and motion of the AFE-FE phase boundary will dictate the dynamics of the large negative ECE and, ultimately, the dynamics of electrocaloric devices based on first-order transitions. In ferroelectrics, the study of domain wall dynamics [7][8][9][10][11][12][13][14][15][16] has been examined in detail on account of their relevance for ferroelectric memories. In contrast, there are far fewer works regarding the dynamics of the ferroelectric-paraelectric phase boundaries in FE [17,18] or the anti-ferroelectric-ferroelectric ones in anti-ferroelectrics. [19][20][21][22][23] Yet, a priori, one cannot assume that the dynamics of domain walls will be the same as the dynamics of phase boundaries, while the former separate different domains within the same ferroelectric phase, the latter separate different phases-in antiferroelectrics, an antipolar phase from a field-induced polar one. Domain switching dynamics is defined by a nucleationpropagation process. On the one hand, nucleation refers to the appearance of "hotspots," where nanoscopic nuclei of switched domains appear and rapidly expand forward across the thickness The large electrocaloric coupling in PbZrO 3 allows using high-speed infrared imaging for visualizing anti-ferroelectric switching dynamics via the associated temperature change. It is found that in ceramic samples of homogeneous temperature and thickness, switching is fast due to the generation of multiple nucleation sites, with devices responding in the millisecond range. By introducing gradients of thickness, however, it is possible to change the dyn...