Origin of mechanical strain sensitivity of pentacene thin-film transistors

Scenev, Vitalij; Cosseddu, Piero; Bonfiglio, Annalisa; Salzmann, Ingo; Severin, Nikolai; Oehzelt, Martin; Koch, Norbert; Rabe, Jürgen P.

doi:10.1016/j.orgel.2013.02.030

Cited by 37 publications

(32 citation statements)

References 31 publications

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“…[18] In the latter case, the influence of the processing parameters in determining the actual crystalline grain sizes has been considered. [20] However, this type of systematic study has hardly been realized on solution-processed organic semiconductor thin films, which are more appealing for industrial low-cost and large-area applications since they can be printed employing roll-toroll processes. Mechanical stability of solution-processed organic semiconductors has been explored in a number of publications, [22]- [25] but the impact of the thin-film morphology on the bending sensitivity, as well as the possibility of tuning this sensitivity by changing the morphological features of the deposited films, are substantially unexplored.…”

Section: Introductionmentioning

confidence: 99%

Morphology Influence on the Mechanical Stress Response in Bendable Organic Field‐Effect Transistors with Solution‐Processed Semiconductors

Lai

Temiño

Cramer

et al. 2017

Adv Elect Materials

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The results not only demonstrate that the response to bending is reliant on the morphological properties of the films, but also that it can be tuned according to the bar-shearing direction. The employment of the proposed approach for the development of devices with different extent of response to mechanical deformation, from bending sensors to strain-insensitive devices for applications needing electrical stability upon deformation, can be thus foreseen.

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Section: Introductionmentioning

confidence: 99%

Morphology Influence on the Mechanical Stress Response in Bendable Organic Field‐Effect Transistors with Solution‐Processed Semiconductors

Lai

Temiño

Cramer

et al. 2017

Adv Elect Materials

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“…[21][22][23][24][25][26][29][30][31][32][33][34] Singlecrystal organic semiconducting materials should be used for reliable studies on the strain effects because they have longrange ordered and well-defined molecular-packing structures with no grain boundaries. [21][22][23][24][25][26] Note that the strain-induced electrical properties in polycrystalline organic thin films are mostly described by the response of grain boundaries rather than that of the materials themselves.…”

Section: Introductionmentioning

confidence: 99%

“…[21][22][23][24][25][26] Note that the strain-induced electrical properties in polycrystalline organic thin films are mostly described by the response of grain boundaries rather than that of the materials themselves. [29][30][31][32][33][34] Studies using singlecrystal organic semiconductors have provided several important results with respect to the structure-electrical property relationships. [21][22][23][24][25][26] An increase in the field-effect mobility of single-crystal 6,13-bis(triisopropylsilylethylnyl) pentacene (TIPS-PEN) was observed by inducing internal lattice strain during a crystal growth process to cause the greater orbital overlaps of adjacent molecules.…”

Section: Introductionmentioning

confidence: 99%

Quantitative Correlation between Carrier Mobility and Intermolecular Center-to-Center Distance in Organic Single Crystals

Park

Jun

et al. 2017

Chem. Mater.

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Charge transport properties of organic semiconductors critically depend on their molecular packing structures. Controlling the charge transport in varying the molecular packing and understanding their structure-property correlations are essential for developing high-performance organic electronic devices. Here we demonstrate that the charge carrier mobility in organic single-crystal nanowires can be modulated with respect to the intermolecular center-to-center distance by applying uniaxial strain to the cofacially stacked crystals. Monotonic changes in charge carrier mobility (from 0.0196 to 19.6 cm 2 V -1 s -1 for 6,13-bis(triisopropylsilylethylnyl) pentacene (TIPS-PEN)) were observed under a wide range of strains from -16.7% (compressive) to 16.7% (tensile). Furthermore, the measured values of charge carrier mobility were in good agreement with theoretical calculations based on charge localized hopping theory. These results provide a definitive relationship between intermolecular packing arrangement and charge transports, which enables a huge improvement in charge carrier mobility for organic single-crystal materials.

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“…Recently, atomic force microscopy was exploited to investigate strain effects in active layers. Nanometer scale changes in morphology at grain-boundaries27 or out-of-plain movements of nano-mesh electrodes28 were visualized as a consequence of strain. Here, we extend the methodologies of investigating strain effects in flexible electronics by applying Scanning Kelvin Probe Microscopy (SKPM) directly on mechanically strained organic thin film transistors (OTFT).…”

mentioning

confidence: 99%

Direct imaging of defect formation in strained organic flexible electronics by Scanning Kelvin Probe Microscopy

Cramer

Travaglini

Lai

et al. 2016

Sci Rep

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The development of new materials and devices for flexible electronics depends crucially on the understanding of how strain affects electronic material properties at the nano-scale. Scanning Kelvin-Probe Microscopy (SKPM) is a unique technique for nanoelectronic investigations as it combines non-invasive measurement of surface topography and surface electrical potential. Here we show that SKPM in non-contact mode is feasible on deformed flexible samples and allows to identify strain induced electronic defects. As an example we apply the technique to investigate the strain response of organic thin film transistors containing TIPS-pentacene patterned on polymer foils. Controlled surface strain is induced in the semiconducting layer by bending the transistor substrate. The amount of local strain is quantified by a mathematical model describing the bending mechanics. We find that the step-wise reduction of device performance at critical bending radii is caused by the formation of nano-cracks in the microcrystal morphology of the TIPS-pentacene film. The cracks are easily identified due to the abrupt variation in SKPM surface potential caused by a local increase in resistance. Importantly, the strong surface adhesion of microcrystals to the elastic dielectric allows to maintain a conductive path also after fracture thus providing the opportunity to attenuate strain effects.

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Origin of mechanical strain sensitivity of pentacene thin-film transistors

Cited by 37 publications

References 31 publications

Morphology Influence on the Mechanical Stress Response in Bendable Organic Field‐Effect Transistors with Solution‐Processed Semiconductors

Morphology Influence on the Mechanical Stress Response in Bendable Organic Field‐Effect Transistors with Solution‐Processed Semiconductors

Quantitative Correlation between Carrier Mobility and Intermolecular Center-to-Center Distance in Organic Single Crystals

Direct imaging of defect formation in strained organic flexible electronics by Scanning Kelvin Probe Microscopy

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