Elemental
selenium (Se) is experiencing a renaissance as a p-type
direct wide bandgap (1.95 eV) photoabsorber, appropriate for integration
with lower bandgap materials in tandem photovoltaic devices. However,
single-junction selenium devices are typically in the superstrate
configuration with the charge-separating p–n junction located
very close to the substrate. For tandem devices, the p–n junction
should ideally lie near the surface of the cell to maximize photocarrier
collection, implying that the n-type heterojunction partner should
be deposited on top of Se. Since Se is a soft, low-melting-point material,
a low-damage deposition technique should then be identified for the
partner material. Here, we investigate the suitability of CdS grown
by chemical bath deposition as an n-type partner for Se cells. We
demonstrate the first functioning CdS/Se solar cell in the standard
superstrate configuration. Although it may be possible to realize
a substrate configuration, we find that the bandgap and electron affinity
of CdS are not optimal for efficient carrier absorption and transport
in selenium devices, suggesting that CdS is a poor partner for selenium.