Origin of surface and subband states at the InAs(111)A surface

Batabyal, Rajib; Zelzer, Steffen; Romagosa, Alec P.; Dardzinski, Derek; Corsetti, Fabiano; Marom, Noa; Krogstrup, Peter

doi:10.1103/physrevmaterials.7.066201

Phys. Rev. Materials

2023

DOI: 10.1103/physrevmaterials.7.066201

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Origin of surface and subband states at the InAs(111)A surface

Rajib Batabyal,

Steffen Zelzer,

Alec P. Romagosa

et al.

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2024

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Cited by 4 publications

References 38 publications

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Self-consistent quasiparticle GW and hybrid functional calculations for Al/InAs/Al heterojunctions: Band offset and spin-orbit coupling effects

Ness,

Corsetti,

Pashov

et al. 2024

Phys. Rev. B

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The electronic structure of surfaces and interfaces plays a key role in the properties of quantum devices. Here, we study the electronic structure of realistic Al/InAs/Al heterojunctions using a combination of density functional theory with hybrid functionals and state-of-the-art quasiparticle GW (QSGW) calculations. We find a good agreement between QSGW calculations and hybrid functional calculations, which themselves compare favorably well with angle-resolved photoemission spectroscopy experiments. Our paper confirms the need for well-controlled quality of the interfaces to obtain the needed properties of InAs/Al heterojunctions. A detailed analysis of the effects of spin-orbit coupling on the spin splitting of the electronic states shows a linear scaling in k space, related to the two-dimensional nature of some interface states. The good agreement by QSGW and hybrid functional calculations opens the door towards trustable use of an effective approximation to QSGW for studying very large heterojunctions. Published by the American Physical Society 2024

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Self-consistent quasiparticle GW and hybrid functional calculations for Al/InAs/Al heterojunctions: Band offset and spin-orbit coupling effects

Ness,

Corsetti,

Pashov

et al. 2024

Phys. Rev. B

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Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface: Odd numbers of quantum dots

Pham,

Pan,

Erwin

et al. 2024

Phys. Rev. Research

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Atom manipulation by scanning tunneling microscopy was used to construct quantum dots on the InAs(111)A surface. Each dot comprised six ionized indium adatoms. The positively charged adatoms create a confining potential acting on surface-state electrons, leading to the emergence of a bound state associated with the dot. By lining up the dots into N-dot chains with alternating tunnel coupling between them, quantum-dot molecules were constructed that revealed electronic boundary states as predicted by the Su-Schrieffer-Heeger (SSH) model of one-dimensional topological phases. Dot chains with odd N were constructed such that they host a single end or domain-wall state, allowing one to probe the localization of the boundary state on a given sublattice by scanning tunneling spectroscopy. We found probability density also on the forbidden sublattice together with an asymmetric energy spectrum of the chain-confined states. This deviation from the SSH model arises because the dots are charged and create a variation in on-site potential along the chain—which does not remove the boundary states but shifts their energy away from the midgap position. Our results demonstrate that topological boundary states can be created in quantum-dot arrays engineered with atomic-scale precision. Published by the American Physical Society 2024

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One-Electron Spectrum of a Short-Period InAs/GaSb Superlattice with Interface Compensation of Strains

Krivobok,

Eroshenko,

Muratov

et al. 2024

Jetp Lett.

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Origin of surface and subband states at the InAs(111)A surface

Cited by 4 publications

References 38 publications

Self-consistent quasiparticle GW and hybrid functional calculations for Al/InAs/Al heterojunctions: Band offset and spin-orbit coupling effects

Self-consistent quasiparticle GW and hybrid functional calculations for Al/InAs/Al heterojunctions: Band offset and spin-orbit coupling effects

Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface: Odd numbers of quantum dots

One-Electron Spectrum of a Short-Period InAs/GaSb Superlattice with Interface Compensation of Strains

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