Origin of the blue and red photoluminescence from oxidized porous silicon

Kanemitsu, Yoshihiko; Futagi, Toshiro; Matsumoto, Takahiro; Mimura, Hidenori

doi:10.1103/physrevb.49.14732

Cited by 121 publications

(69 citation statements)

References 20 publications

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“…Size-controlling of nanoparticles can be precisely performed by low-pressure-operated differential mobility analyzers (LP-DMA) which can be combined into the PLA-IBG formation units [6,7]. Surface conditions of nanoparticles can be controlled by annealing in ambient gas after deposition of nanoparticles on a substrate [3,8].…”

Section: Introductionmentioning

confidence: 99%

“…However, it has been difficult to develop nanoparticles into advanced functional devices because they have a large surface to volume ratio, and are extremely sensitive to impurities and/or damage. Light-emitting properties of the nanoparticles, particularly light-emitting wavelength and efficiency, strongly depend on their mean sizes, size distributions [2], and surface conditions [3].…”

Section: Introductionmentioning

confidence: 99%

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Mechanisms of Visible Photoluminescence from Size-Controlled Silicon Nanoparticles

et al. 2002

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We have observed visible photoluminescence (PL) spectra (peak energy: 3.1 eV) of size-controlled silicon (Si) nanoparticles annealed in oxygen gas. The PL peak energy did not depend on the temperature, and the PL lifetime was relatively fast (on the order of nanoseconds). It was inferred that the visible PL was attributed to localized states in the oxidized surfaces of size-controlled Si nanoparticles. We also observed the PL excitation spectra and studied the excitation process. In order to elucidate mechanisms of the visible PL, excitation and recombination processes are discussed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mechanisms of Visible Photoluminescence from Size-Controlled Silicon Nanoparticles

et al. 2002

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“…122 Alternatively, other groups have attributed blue PL originating from porous silicon (p-Si) to emission from the quantum confined core, while the red emission was attributed to surface oxide. 66,115 However, the changes in surface composition concurrent with the development of blue PL observed in this study points to the former of the explanations: the blue PL results from oxidation of the Si NP surface.…”

Section: Typical Of Minimally Oxidized H-si Nps Produced By the Methomentioning

confidence: 39%

“…For example, oxidation of high surface area Si occurs readily in ambient and laboratory conditions and is frequently cited to coincide with sudden, drastic changes in the observed PL. 23,51,52,55,[65][66][67] However, the observed increase or decrease in emission energy that oxygen passivation causes varies from study to study.…”

Section: Effect Of Defects On Photoluminescence From Silicon Nanopartmentioning

confidence: 97%

“…However, the formation of such a layer is difficult to achieve experimentally, and surface oxidation typically results in the formation of electronically active states within the bandgap. 23,51,52,55,63,[65][66][67][68]70 Alkyl-passivation has long been used in order to surface stabilize bulk and nanocrystalline silicon surfaces, in particular against ambient oxidation. Alkylpassivation is thought to have negligible effects on the photophysical properties of the Si domains, similar to hydride-passivation.…”

Section: Surface Defect Prevention In Silicon Nanoparticlesmentioning

confidence: 99%

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Investigation into Effects of Instability and Reactivity of Hydride-Passivated Silicon Nanoparticles on Interband Photoluminescence

Radlinger¹

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While silicon has long been utilized for its electronic properties, its use as an optical material has largely been limited due to the poor efficiency of interband transitions. However, discovery of visible photoluminescence (PL) from nanocrystalline silicon in 1990 triggered many ensuing research efforts to optimize PL from nanocrystalline silicon for optical applications. Currently, use of photoluminescent silicon nanoparticles (Si NPs) is commercially limited by: 1) the instability of the energy and intensity of the PL, and 2) the low quantum yield of interband PL from Si NPs.Herein, red-emitting, hydrogen-passivated silicon nanoparticles (H-Si NPs) were synthesized by thermally-induced disproportionation of a HSiCl 3 -derived (HSiO 1.5 )n polymer. The H-Si NPs produced by this method were then subjected to various chemical and physical environments to assess the long-term stability of the optical properties as a function of changing surface composition. This dissertation is intended to elucidate correlations between the reported PL instability and the observed changes in the Si NP surface chemistry over time and as a function of environment.First, the stability of the H-Si NP surface at slightly elevated temperatures towards reactivity with a simple alkane was probed. The H-Si NPs were observed by FT-IR spectroscopy to undergo partial hydrosilylation upon heating in refluxing hexane, in addition to varying degrees of surface oxidation. The unexpected reactivity of the Si surface in n-hexane supports the unstable nature of the H-Si NP surface, and furthermore implicates the presence of highly-reactive Si radicals on the surfaces of the Si NPs. We propose that reaction of alkene impurities with the Si surface radicals is largely responsible for the observed surface alkylation. However, we also present an alternate ii mechanism by which Si surface radicals could react with alkanes to result in alkylation of the surface.Next, the energy and intensity stability of the interband PL from H-Si NPs in the presence of a radical trap was probed. Upon addition of (2,2,6,6,-tetramethyl-piperidin-1-yl)oxyl (TEMPO), the energy and intensity of the interband transition was observed to change over time, dependent on the reaction conditions. First, when the reaction occurred at 4ºC with minimal light exposure, the interband transition exhibited a gradual hypsochromic shift to between 595 nm and 655 nm, versus the λ max of the original low energy emission peak at 700 nm, depending on the amount of TEMPO in the sample.Second, when the reaction proceeded at room temperature with frequent exposure to 360 nm irradiation, the original interband transition at 660 nm was quenched while a new peak at 575 nm developed. Based on all the data collected and analyzed, we assign the 595 -655 nm transition as due to interband exciton recombination from Si NPs with reduced diameters relative to the original Si NPs. We furthermore assign the 575 nm transition as due to an oxide-related defect state resulting from rapid oxidation of pho...

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Oxidation-Induced Modifications of Trap Parameters in Nanocrystalline Porous Silicon

Draghici

Miu

Iancu

et al. 2000

phys. stat. sol. (a)

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The changes produced by anodic and natural oxidation upon the trap parameters in nanocrystalline porous silicon were compared. To put them in evidence, we used optical charging spectroscopy. The same trapping levels (with the same activation energies) were observed after both oxidation processes. In comparison with fresh samples, a new trapping level (the deepest one) appears and the concentrations of the surface traps strongly diminish.

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Origin of the blue and red photoluminescence from oxidized porous silicon

Cited by 121 publications

References 20 publications

Mechanisms of Visible Photoluminescence from Size-Controlled Silicon Nanoparticles

Mechanisms of Visible Photoluminescence from Size-Controlled Silicon Nanoparticles

Investigation into Effects of Instability and Reactivity of Hydride-Passivated Silicon Nanoparticles on Interband Photoluminescence

Oxidation-Induced Modifications of Trap Parameters in Nanocrystalline Porous Silicon

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