Origin of the Difference in the Resistivity of As‐Grown Focused‐Ion‐ and Focused‐Electron‐Beam‐Induced Pt Nanodeposits

Abstract

We study the origin of the strong difference in the resistivity of focused-electron- and focused-Ga-ion-beam-induced deposition (FEBID and FIBID, resp.) of Pt performed in a dual beam equipment using(CH3)3Pt(CpCH3)as the precursor gas. We have performed in-situ and ex-situ resistance measurements in both types of nanodeposits, finding that the resistivity of Pt by FEBID is typically four orders of magnitude higher than Pt by FIBID. In the case of Pt by FEBID, the current-versus-voltage dependence is nonlinear and the resistance-versus-temperature behavior is strongly semiconducting, whereas Pt by FIBID shows linear current-versus-voltage dependence and only slight temperature dependence. The microstructure, as investigated by high-resolution transmission electron microscopy, consists in all cases of Pt single crystals with size about 3 nm embedded in an amorphous carbonaceous matrix. Due to the semiconducting character of the carbon matrix, which is the main component of the deposit, we propose that the transport results can be mapped onto those obtained in semiconducting materials with different degrees of doping. The different transport properties of Pt by FEBID and FIBID are attributed to the higher doping level in the case of FIBID, as given by composition measurements obtained with energy-dispersive X-ray microanalysis.

Identifying the crossover between growth regimes via in-situ conductance measurements in focused electron beam induced deposition

“…The difference of conductivity between samples prepared by means of FEBID and FIBID is, however, not inherent to deposits fabricated by the dissociation of W(CO) 6 . The same effect can be observed for, e.g., Pt-based deposits for which the origin of the enhancement of conductivity in the case of Pt-FIBID is attributed to a higher doping level of the carbonaceous matrix due to gallium implantation, which always represents an accompaniment of FIBID using a Ga + -ion beam [39]. In general, the conductivity is determined by the chemical composition as well as the micro-or nanostructure of the deposits.…”

Roles of secondary electrons and sputtered atoms in ion-beam-induced deposition

“…These results are consistent with previous experimental 15,16 and theoretical 17 works on sputtering, deposition, 18,19 and secondary electron emission. [20][21][22] Moreover, the energy spectrum of the secondary electrons shifts slightly to higher energies with increasing ion energy, consistent with related studies.…”

Antiferromagnetism atT>500Kin the layered hexagonal ruthenateSrRu2O6Hiley1, Scanlon2, Sokol3 et al. 2015Phys. Rev. BSelf Cite503340View full textAdd to dashboardCite

“…To make resistivity measurements, a small amount of sample was suspended in ethanol and sonicated before being deposited onto a thermally oxidized silicon wafer containing pre-patterned metallic electrodes. A crystal was connected to the electrodes by focused ion beam induced deposition (FIBID) of Pt [22] and four-probe in situ measurements were made. An XPS spectrum was recorded using a Kratos Axis Ultra DLD spectrometer with the samples attached to electrically-conductive carbon tape, mounted on to a sample bar and studied at a base pressure of ~ 2  10 10 mbar at room temperature.…”