Origin of the Excess Capacitance at Intimate Schottky Contacts

Werner, J. H.; Levi, A. F. J.; Tung, R. T.; Anzlowar, M.; Pinto, M.R.

doi:10.1103/physrevlett.60.53

Cited by 209 publications

(94 citation statements)

References 15 publications

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“…Recently, negative capacitances have been reported on a variety of devices that were based on organic materials [1][2][3][4] or on crystalline or amorphous inorganic semiconductors. [5][6][7][8][9][10][11][12][13][14] Equally numerous explanations for this negative capacitance ͑NC͒ have been presented that involved minority carrier flow, 1,[3][4][5] interface states, 9,13 slow transient time of injected carriers, 14 charge trapping, 2,3,[10][11][12] or space charge. 6 The bulk of these descriptions are either based on phenomenological arguments or based on device representation in an equivalent circuit.…”

Section: Introductionmentioning

confidence: 99%

Negative capacitances in low-mobility solids

2005

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The negative capacitance as often observed at low frequencies in semiconducting devices is explained by bipolar injection in diode configuration. Numerical calculations are performed within the drift-diffusion approximation in the presence of bimolecular recombination of arbitrary strength. Scaling relations for the characteristic frequency with bias, sample dimensions, and carrier mobilities are presented in the limits of weak and strong recombination. Finally, impedance measurements conducted on a light-emitting diode and photovoltaic cell based on low-mobility organic semiconductors are modeled as a function of bias and temperature, respectively.

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Section: Introductionmentioning

confidence: 99%

Negative capacitances in low-mobility solids

2005

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“…This behavior of C-V -f and G/ω-V -f can be explained by an inductive behavior [9,14]. Some studies have shown that the observed inductive effect at low frequencies arises from the high-level injection of minor carriers into the bulk semiconductor in the Si based SBD [23].…”

Section: Resultsmentioning

confidence: 99%

“…It is known that the existence of localized interface states at M/S interface results in a formation of charge dipole at the interface. Under forward bias, most of the applied bias voltage across the diode is shared by the semiconductor, series resistance of device and the interfacial dipole [9,17,18,23]. Hence, it is thought that the capacitance values decrease with the increasing polarization and more carriers are introduced into the structure [9].…”

Section: Resultsmentioning

confidence: 99%

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On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes

et al. 2015

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The frequency-dependent electrical characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/ n-GaAs Schottky barrier diodes have been investigated by using capacitance-voltage (C-V ) and conductancevoltage (G/ω-V ) measurements at room temperature. Negative capacitance behavior has been observed in the C-V characteristic for each frequency. The magnitude of absolute value of C was found to increase with decreasing frequency in the forward bias region. The value of G/ω increases with decreasing frequency in the positive region. This can be attributed to the increase in the polarization at low frequencies and to the fact that more carriers are introduced into the structures. Negative capacitance phenomenon can be explained by the loss of interface charges from the occupied states below the Fermi level, caused by impact ionization process. According to obtained result, the values of C and G/ω are strong functions of frequency and applied bias voltage, particularly in the accumulation an inversion region. Doping concentration (N d ), diffusion potential (V d ), Fermi energy level (E f ), and barrier height (Φ b (C-V )) values have been calculated from reverse bias C −2 -V plots for 3 MHz. Finally, the obtained value of Rs in the accumulation region increases with decreasing frequency.

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“…It has been observed in samples as different as crystalline and amorphous semiconductor devices, [1][2][3][4][5][6][7][8][9] organic compounds, [10][11][12][13][14] composite materials/nanomaterials, 9,15-22 electrochemical cells, [23][24][25] geological samples, 26 biological membranes, [27][28][29] and even moist surfaces. 30 Furthermore, it has been shown that NCs can originate at interfaces as well as in the bulk of the materials.…”

Section: Introductionmentioning

confidence: 99%

General mechanism for negative capacitance phenomena

et al. 2009

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The existence of a negative static dielectric constant has drawn a great deal of theoretical controversy. Experimentally, one has never been observed. However, low-frequency negative capacitance has been widely reported in fields including physics, chemistry, biology, geology, and electronics. This wide variety of systems possesses an extremely diverse set of physical processes that, surprisingly, share similar characteristics. We present a general mechanism that unites the various instances of negative capacitance under a common framework. The mechanism demonstrates that the negative capacitance arises from dc/ac signal mixing across a nonlinear conductor. Verification of the model is performed in physically distinct samples: an electrorheological fluid, a fuel cell, and a solar cell. Furthermore, we argue that the negative capacitance, under appropriate conditions, can be associated with a negative-differential dielectric constant, possibly even in the static limit.

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Origin of the Excess Capacitance at Intimate Schottky Contacts

Cited by 209 publications

References 15 publications

Negative capacitances in low-mobility solids

Negative capacitances in low-mobility solids

On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes

General mechanism for negative capacitance phenomena

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