Origin of the visible absorption in radiation-resistant optical fibers

Morana, Adriana; Cannas, Marco; Girard, Sylvain; Boukenter, Aziz; Vaccaro, L.; Perisse, J.; Macé, Jean-Reynald; Ouerdane, Y.; Boscaino, R.

doi:10.1364/ome.3.001769

Cited by 22 publications

(10 citation statements)

References 22 publications

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“…Despite previous studies on similar fibers, in which were observed NBOHC and SiE′ with absorbing bands at 4.8 and 5.8 eV, in our explored time and energy ranges their contributions are negligible. Always in previous study, the NBOHC band peaked at 1.97 eV was observed, its contribution is not resolved in this work, probably because its oscillator strength is too low (1.9 × 10 −4 ). Following the STH kinetics of both fibers in Figure , it is evident that the annealing processes of the corresponding defects differ, highlighting that the generation and the lifetime of STHs strongly depend on the material properties, as discussed in literature …”

Section: Discussioncontrasting

confidence: 66%

Pulsed X‐Ray Radiation Responses of Solarization‐Resistant Optical Fibers

Michele

Marcandella

Francesca

et al. 2018

Physica Status Solidi (a)

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The transient radiation‐induced attenuation (RIA) of two different versions of pure‐silica‐core (PSC) multimode optical fibers (so‐called “solarization‐resistant” fibers) exposed to nanosecond 1 MeV X‐ray pulses are investigated. On‐line RIA spectra measurements at both room temperature (RT) and liquid nitrogen temperatures (LNT) in the range 1–3.5 eV are performed. Following the RIA kinetics, the properties of the metastable defects that are bleached just after the pulse are discussed. The spectral decomposition of the RIA is performed using known Gaussian bands associated to point defects absorbing in this spectral range. For both fiber types, the generation and the post‐irradiation kinetics of the self‐trapped holes (STHs) that are the main contributor to the transient RIA are investigated particularly. Moreover, thanks to the measurements performed at low temperatures the complex temperature dependence of the kinetics of self‐trapped holes and some chlorine‐related species is characterized.

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Section: Discussioncontrasting

confidence: 66%

Pulsed X‐Ray Radiation Responses of Solarization‐Resistant Optical Fibers

Michele

Marcandella

Francesca

et al. 2018

Physica Status Solidi (a)

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“…This spectral feature is well known and attributed to the point defects called NBOHC. These defects are also commonly observed in irradiated silica-based materials [21,22]. Fig.…”

Section: Pl and Raman Measurementsmentioning

confidence: 82%

“…The first thermal treatment (TT 1) consists of sample annealing until 500°C (20 min). 500°C is a temperature for which the NBOHC defects should be bleached [22]. The second treatment, up to 750°C (20 min), ensures the annealing of almost all the induced defects [32].…”

Section: Thermal Treatmentmentioning

confidence: 99%

Near-IR- and UV-femtosecond laser waveguide inscription in silica glasses

Michele¹,

Royon²,

Marin³

et al. 2019

Opt. Mater. Express

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The influence of laser parameters on silica based waveguide inscription is investigated by using femtosecond laser pulses at 1030 nm (near-IR) and at 343 nm (UV). Negative phase contrast microscopy technique is used to measure the refractive index contrast for different photo-inscribed waveguides and shows the effects of both laser wavelength and scanning speed. In particular, UV photons have a higher efficiency in the waveguide production process as also confirmed by the lower optical losses at 1550 nm in these waveguides. These measurements are combined with micro-Raman and photoluminescence techniques, highlighting that laser exposure induces both structural modification of the silica and point defects generation. The contribution of induced defects to the total refractive index change is singled out by applying two different thermal treatments on the waveguide. The first, up to 500°C, is able to remove the most of the induced non-bridging-oxygen-hole-centers (NBOHCs) while the second up to 750°C erases almost all absorbing induced defects, highlighting the strong contribution of additional defects, not yet identified.

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“…From these measurements at least two different contributions are present. We find an UV-absorption tail which increases with increasing energy and an absorption band centered at around 2 eV that is known to be due to NBOHC defects [3].We can observe that RIA increases with increasing of irradiation doses. The attenuation level is of 0.27dB/m in sample irradiated at 10 15 n/cm², 0.88dB/m at the fluence of 10 16 n/cm² and 6.28dB/m for 10 17 n/cm².…”

Section: Resultsmentioning

confidence: 60%