MXenes are emerging members in the
two-dimensional (2D) material
family and are highlighted by their high electrical conductivity.
Among different MXenes, molybdenum-based MXenes, especially molybdenum
nitrides (MoN
x
), are rarely accessible
through the common synthetic approach of selective etching due to
the absence of stable MAX phase precursors. In this work, we apply
the atomic substitution approach to synthesize two phases of ultrathin
nonlayered molybdenum nitrides (i.e., Mo5N6 and
δ-MoN) from 1.6 to 42.9 nm thickness by converting layered MoS2 under different temperatures. The morphology and 2D nature
of MoS2 are well remained in both phases. These newly created
2D materials are further characterized using Raman spectroscopy, high-resolution
transmission electron microscopy, and electrical measurements, suggesting
that both phases are highly crystalline and highly conductive down
to the thickness of a few nanometers. Moreover, Ohmic contacts are
formed between the ultrathin nitrides and Cr/Au electrodes, suggesting
the great potential of the obtained nitrides for nanoelectronic device
applications. The stability test shows that the Ohmic contact is well
maintained after 4 weeks under ambient conditions with a slight degradation
in conductivity. This study extends the 2D family by providing highly
conductive members, offering desired building blocks for solid-state
nanoelectronic devices.