Origins of 1/f Noise in Electronic Materials and Devices: A Historical Perspective

Assessing the Influence of Sensor-Induced Noise on Machine-Learning-Based Changeover Detection in CNC Machines

“…The spectral slope has a value of −1, and the power in each range of frequencies increases as the frequency rises by a factor of 2. The 1/f noise is frequently generated in electronic components and circuits [ 74 ]. The spectral density of 1/f noise follows an inverse power law.…”

Low-frequency noise in nanowires

“…67 However, as noted in Section II, the Hooge model does not correctly characterize or parameterize the noise of semiconductor devices. 55,66,76,95,128,132,192 It is therefore more likely that the noise of these NWs is due to a mixture of number fluctuations (eqn ( 8)-( 16)) 73,108,112 and mobility fluctuations due to carrier scattering by defects and/or impurity atoms within NW channels, e.g., as described by the local interference model of Pelz and Clarke. 86,180,181 The Hooge mobility model is similarly used to interpret the LF noise observed in the Si NW MOSFETs of Fig.…”

“…63 As noted above, deviations from an inverse (V GS -V TH ) 2 dependence can occur for a several reasons in MOS devices, e.g., strongly varying spatial or energy distributions of defects, as often found. 66,73,90,107,[117][118][119][120][121][122][123][124]128,154,192 Noise vs. temperature measurements usually are required to determine if this is the case. 55,66,73,90,95 In the absence of such variation in defect spatial or energy distribution, carrier scattering by defects and/ or impurity atoms within the NW channels is the most likely origin for the "excess" LF noise above that expected from number fluctuations in the subthreshold region of device operation in Fig.…”