Origins of the enhanced thermoelectric performance for p-type Ge1-xPbxTe alloys

Herein, the original technique for transport measurements at one‐axis deformation is applied for the characterization of In‐doped n‐type Pb1−xSnxTe thin films on a mica substrate. The main advantage of the developed setup is the possibility of obtaining a significantly higher pressure compared with bulk samples. A systematic study of the transport properties as a function of pressure for In‐doped PbTe and PbSnTe films is conducted. A huge deformation of up to ≈6% without sample destruction is obtained within one‐axis deformation and an applied pressure of up to ≈30 kbar for Pb1−xInxTe1−yIy and Pb1−x−ySnxInyTe thin films. This allowed us to determine the position of the In resonance level in the band spectrum of the PbSnTe compound as a function of the pressure. The In impurity level is moving up with the application of pressure. Such a conclusion is confirmed by the Hall effect and electrical conductivity measurements for Pb1−xSnxTe films doped with In and can be explained by the fact that In impurity wave functions are strongly localized and interact weakly with Bloch states of PbSnTe and with each other.

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“…The calculations of the electron thermal conductivity κ e were carefully described in the previous study. [ 45 ]…”

Section: Methodsmentioning

confidence: 99%

Influence of Deformation on Pb_1−xIn_xTe_1−yI_y and Pb_1−x−ySn_xIn_yTe Films

Parashchuk

Chernyak

Немов

et al. 2020

Physica Status Solidi (b)

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“…Thermoelectric figure of merit ZT for materials, which can be used for fabrication of segmented generator modules over 300–800 K temperature range 6–15 …”

Section: Introductionmentioning

confidence: 99%

Feasibility of high performance in p‐type Ge₁₋_xBi_xTe materials for thermoelectric modules

et al. 2022

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GeTe is a promising candidate for the fabrication of high-temperature segments for p-type thermoelectric (TE) legs. The main restriction for the widespread use of this material in TE devices is high carrier concentration (up to ∼ 10 21 cm −3 ), which causes the low Seebeck coefficient and high electronic component of thermal conductivity. In this work, the band structure diagram and phase equilibria data have been effectively used to attune the carrier concentration and to obtain the high TE performance. The Ge 1−x Bi x Te (x = 0.04) material prepared by the Spark plasma sintering (SPS) technique demonstrates a high power factor accompanied by moderate thermal conductivity. As a result, a significantly higher dimensionless TE figure of merit ZT = 2.0 has been obtained at ∼ 800 K. Moreover, we are the first to propose that application of the developed Ge 1−x Bi x Te (x = 0.04) material in the TE unicouple should be accompanied by SnTe and CoGe 2 transition layers. Only such a unique solution for the TE unicouple makes it possible to prevent the negative effects of high contact resistance and chemical diffusion between the segments at high temperatures.

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“…Теллурид германия является перспективным среднетемпературным термоэлектрическим материалом. Сам GeTe и его твердые растворы с PbTe имеют высокую термоэлектрическую эффективность [1][2][3][4][5]. При этом содержание свинца в них невелико, что привлекательно с точки зрения экологических требований.…”

Section: Introductionunclassified

“…В чистом GeTe присутствует большая концентрация вакансий германия, обусловливающая высокую концентрацию дырок [6]. Для оптимизации концентрации дырок в GeTe и в твердых растворах с PbTe использовалось легирование висмутом и сурьмой [1][2][3][4][5]. В твердых растворах Ge 0.95 Pb 0.05 Te, легированных висмутом, ZT достигает значений 1.5, а в нелегированных растворах этого состава -до 1.1 [1,2].…”

Section: Introductionunclassified

“…Для оптимизации концентрации дырок в GeTe и в твердых растворах с PbTe использовалось легирование висмутом и сурьмой [1][2][3][4][5]. В твердых растворах Ge 0.95 Pb 0.05 Te, легированных висмутом, ZT достигает значений 1.5, а в нелегированных растворах этого состава -до 1.1 [1,2]. Недавно были опубликованы результаты исследований твердых растворов Ge 0.9 Pb 0.1 Te, легированных сурьмой и висмутом, в которых были получены значения параметра ZT , значительно превышающие 2 [3,4].…”

Section: Introductionunclassified

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Теоретическое исследование фононного спектра и теплопроводности решетки в GeTe

Пшенай-Северин¹,

Шабалдин²,

Константинов³

et al. 2021

Физика И Техника Полупроводников

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Recently, there has been renewed interest in thermoelectric materials based on germanium telluride, which demonstrate high efficiency in mid-temperature range. This paper discusses the theoretical description of the phonon spectrum and lattice thermal conductivity in GeTe using ab initio methods. Using these methods, the temperature dependence of the lattice thermal conductivity in the rhombohedral phase was calculated and effects of scattering by point defects and nanostructuring were estimated. The modification of the phonon spectrum upon the transition to the high-temperature cubic phase is investigated. The calculated temperature dependences of the lattice thermal conductivity are compared with the available experimental data on GeTe and its solid solutions.

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Origins of the enhanced thermoelectric performance for p-type Ge1-xPbxTe alloys

Cited by 24 publications

References 44 publications

Influence of Deformation on Pb_1−xIn_xTe_1−yI_y and Pb_1−x−ySn_xIn_yTe Films

Influence of Deformation on Pb_1−xIn_xTe_1−yI_y and Pb_1−x−ySn_xIn_yTe Films

Feasibility of high performance in p‐type Ge₁₋_xBi_xTe materials for thermoelectric modules

Теоретическое исследование фононного спектра и теплопроводности решетки в GeTe

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Origins of the enhanced thermoelectric performance for p-type Ge1-xPbxTe alloys

Cited by 24 publications

References 44 publications

Influence of Deformation on Pb1−xInxTe1−yIy and Pb1−x−ySnxInyTe Films

Influence of Deformation on Pb1−xInxTe1−yIy and Pb1−x−ySnxInyTe Films

Feasibility of high performance in p‐type Ge1−xBixTe materials for thermoelectric modules

Теоретическое исследование фононного спектра и теплопроводности решетки в GeTe

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Influence of Deformation on Pb_1−xIn_xTe_1−yI_y and Pb_1−x−ySn_xIn_yTe Films

Influence of Deformation on Pb_1−xIn_xTe_1−yI_y and Pb_1−x−ySn_xIn_yTe Films

Feasibility of high performance in p‐type Ge₁₋_xBi_xTe materials for thermoelectric modules