Orthotropic stress field induced by TSV and its impact on device performance

Relation between Raman frequency and triaxial stress in Si for surface and cross-sectional experiments in microelectronics components

“…A possible approach is to use an analytical model or finite element modelling (FEM) to predict the strain tensor elements in the silicon and then calculate the expected Raman shift taking into account all the stress/strain tensor elements. This "predictive Raman spectroscopy" approach was originally developed for Si isolation structures 14 and was successfully applied to Cu TSVs [9][10][11]13,15,16 but can be very time-consuming. It also does not offer easy insight into the various stress components.…”

Research on mobility variance caused by TSV-induced mechanical stress in 3D-IC

“…IC chips are typically fabricated on (001) silicon substrate, with either <100> or <110> MOSFET channels [15].Using (6) mobility variance with <100> and <110> crystal orientation can be expressed as following respectively. 11 By transforming the coordinate from a cylindrical system to a Cartesian system, (7) and (8) can be rewritten as: Fig.…”

“…The TSV is the main implementation techniques in 3D integration currently, but an undesired reliability issues is also induced by the TSV [5]. Due to mismatch in the coefficients of thermal expansion (CTEs) of silicon and copper, mechanical stresses in surrounding silicon are induced near TSV interconnects in 3D ICs [6]. The stress can cause the mobility of substrate material variance according to piezoelectric effect, and it may affect the performance of active devices near TSV and even the system performance.…”