Oscillating electron mobility in GaAs/Al x Ga 1 − x As double quantum well structure under applied electric field

Sahu, Trinath; Sahoo, N. K.

doi:10.1016/j.spmi.2014.11.014

Cited by 15 publications

(2 citation statements)

References 24 publications

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“…However, for multisubband occupancy equation (8) can be expressed as [36,37,41]: Here, B nn , C nm and D nm are scattering rate matrix elements. We adopt random phase approximation and consider the screening effect by utilizing static dielectric response function formalism [36,37,[40][41][42]. So, these elements can be presented by screened potentials…”

Section: Theorymentioning

confidence: 99%

Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Jena¹,

Sahu

Sahoo

et al. 2023

Phys. Scr.

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Here, we analyse the effect of structure parameters like well width (w), central barrier width (b), and alloy concentration (x) on multisubband electron mobility µ in a GaAs-AlxGa1-xAs based modulation doped asymmetric V-shaped-double-quantum-well (VDQW) structure. The asymmetry in the structure potential is generated through the difference in the doping concentrations (Nd) in the side barriers i.e., Nd1 (0 to 4×1018 cm-3) and Nd2 (2×1018 cm-3). The mobility µ is calculated by considering ionised impurity (imp) and alloy disorder (ad) scattering mechanisms. The continuous variation of x inside the well makes µad < µimp resulting in the dominance of ad-scattering on µ as a function of Nd1. As a result, at the interface an increase in x from 0.1 to 0.3 reduces µ around 40%. However, an increase in w symmetrically (w1 = w2) enhances µ. Further, the introduction of non-symmetric well profile (w1≠ w2) not only causes asymmetric redistribution of subband wave functions ψ0 and ψ1 in the wells, but also changes the position and hence occupation of subband energy levels, thereby influencing the subband mobility. As the difference in w1 and w2 increases, the system becomes more and more single subband occupied as a function of Nd1 and hence the mobility enhances due to the absence of intersubband scattering. Our results also reflected that an increase in b from 20 Å to 80 Å has a marginal effect on µ during single subband occupancy but improves µ during double subband occupancy through intersubband interaction.

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Section: Theorymentioning

confidence: 99%

Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Jena¹,

Sahu

Sahoo

et al. 2023

Phys. Scr.

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“…16,17) By varying the structure parameters or by applying an external electric field, the subband wave functions can be displaced from one well to the other. [16][17][18] The asymmetry of the structure parameters affects the optical properties of pseudomorphic double quantum wells substantially. [19][20][21][22][23] In this work, we analyze the electron mobility as a function of the asymmetry of the structure parameters of a strained GaAs=In x Ga 1−x As double quantum well.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear electron transport in GaAs/InGaAs asymmetric double-quantum-well pseudomorphic high-electron-mobility transistor structure

Mohapatra

Sahu

Panda

et al. 2017

Jpn. J. Appl. Phys.

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We analyze the structural-asymmetry-induced nonlinear enhancement of the electron mobility μ in a GaAs/InxGa1−xAs double-quantum-well pseudomorphic high-electron-mobility transistor (p-HEMT). We consider the well widths wi and ws and the doping concentrations ndi and nds in the barriers along the substrate (inverted doping) and surface (surface doping), respectively. We show that for a suitable choice of ws and nds, the variation of wi leads to interesting changes in the occupation of subbands, i.e., first, single-subband, then double-subband, and again, single-subband occupancy. By increasing ndi, the range of double-subband occupancy is enhanced. However, the lowering of μ due to the inter-subband effects is minimized. In the case of a single-channel HEMT, i.e., say, for ndi = 0, only a single subband is occupied. The mobility exhibits a cusplike behavior with a minimum at a certain value of wi. If one takes a higher value of nds, the occupation of subbands shows a different trend, i.e., from single- to double-subband occupancy as a function of wi for different ndi values with nonmonotonic variations of μ. Our results of the nonlinear enhancement of mobility can be utilized for the analysis of the coupled GaAs/InxGa1−xAs double-quantum-well p-HEMT structure.

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Modulation of Electronic Properties in Double Quantum Well-Based FET Structure

Sahu

Sahoo

Patnaik

2022

Lecture Notes in Electrical Engineering

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Oscillating electron mobility in GaAs/Al x Ga 1 − x As double quantum well structure under applied electric field

Cited by 15 publications

References 24 publications

Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Nonlinear electron transport in GaAs/InGaAs asymmetric double-quantum-well pseudomorphic high-electron-mobility transistor structure

Modulation of Electronic Properties in Double Quantum Well-Based FET Structure

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