Oscillation of Electron Mobility in V‐Shaped Double Quantum Well Structure Under Applied Electric Field

Palo, Sangeeta; Sahoo, N. K.; Панда, А. К.; Sahu, Trinath

doi:10.1002/pssb.201800337

Cited by 5 publications

(4 citation statements)

References 44 publications

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“…It would be interesting to compare our results of oscillatory μ as a function of F (figure 2) with that of a symmetrically barrier-doped DQW structure [34]. We note that in the case of structural and doping symmetry, the DQW is potentially symmetric at F=0.…”

Section: Resultsmentioning

confidence: 91%

“…By applying F towards the surface (say, along the positive z-axis) and substrate (along negative z-axis), the potential tilts equally in the respective directions through V F (z). As a result, there occurs identical nonlinear variation of μ with F in both the directions, thereby exhibiting a symmetric pattern about F=0 with a dip in μ near the RSS [34]. Whereas in the present case, because of single side doping, the asymmetry in the potential of the DQW is compensated by varying the external electric field F along the positive z-axis and at F=9.8 kV cm −1 RSS occurs leading to an asymmetric oscillatory variation of μ.…”

Section: Resultsmentioning

confidence: 95%

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Asymmetric doping induced nonlinear electron mobility in double V-shaped quantum well based FET structure under external electric field

Jena¹,

Palo²,

Sahu³

et al. 2021

Phys. Scr.

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The effect of asymmetric doping profile on the electron mobility μ is studied in a Field Effect Transistor (FET) structure based on Al x Ga 1−x As double V-shaped quantum well (D-VQW) in presence of an external electric field F. We introduce asymmetry in the structure by considering different doping concentrations in the side barriers along the substrate and surface. The resultant asymmetric potential is varied as a function of F. Accordingly the energy levels E l and wave functions ξ l within the coupled structure alter. By varying F suitably the resonance of subband states can be realized between the wells. Around the point of resonance, ξ l rearranges significantly. The change in ξ l influences the screened scattering potentials through intersubband effects leading to nonlinear μ. We consider ionized impurity (Imp-) scattering and alloy disorder (Al-) scattering for the D-VQW structure and show that under double subband occupancy, μ has an oscillatory behavior, basically due to Imp-scattering. The oscillatory μ enhances by increasing the well width and central barrier width and also by decreasing the height of the V-shaped well. Our results of nonlinear electron mobility can be employed to tune the transistor performance with gate electric field by adopting an optimized set of structure parameters.

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Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 95%

Asymmetric doping induced nonlinear electron mobility in double V-shaped quantum well based FET structure under external electric field

Jena¹,

Palo²,

Sahu³

et al. 2021

Phys. Scr.

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“…Also, the introduction of a thin barrier layer between two VQW structures makes a V-shaped double quantum well (VDQW) structure. In addition to the confinement effect, the coupling of subband wave functions and splitting of energy levels give interesting phenomena like the resonance of subband states which modify the transport as well as optical properties of VDQW based devices [16][17][18][19][20][21][22][23][24]. Numerous studies have been made to alter the optical characteristics of single and double QW structures with V-shaped, semi-V-shaped, and inverse V-shaped shapes [7,[25][26][27][28][29][30][31][32][33].…”

Section: Introductionmentioning

confidence: 99%

Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Jena¹,

Sahu

Sahoo

et al. 2023

Phys. Scr.

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Here, we analyse the effect of structure parameters like well width (w), central barrier width (b), and alloy concentration (x) on multisubband electron mobility µ in a GaAs-AlxGa1-xAs based modulation doped asymmetric V-shaped-double-quantum-well (VDQW) structure. The asymmetry in the structure potential is generated through the difference in the doping concentrations (Nd) in the side barriers i.e., Nd1 (0 to 4×1018 cm-3) and Nd2 (2×1018 cm-3). The mobility µ is calculated by considering ionised impurity (imp) and alloy disorder (ad) scattering mechanisms. The continuous variation of x inside the well makes µad < µimp resulting in the dominance of ad-scattering on µ as a function of Nd1. As a result, at the interface an increase in x from 0.1 to 0.3 reduces µ around 40%. However, an increase in w symmetrically (w1 = w2) enhances µ. Further, the introduction of non-symmetric well profile (w1≠ w2) not only causes asymmetric redistribution of subband wave functions ψ0 and ψ1 in the wells, but also changes the position and hence occupation of subband energy levels, thereby influencing the subband mobility. As the difference in w1 and w2 increases, the system becomes more and more single subband occupied as a function of Nd1 and hence the mobility enhances due to the absence of intersubband scattering. Our results also reflected that an increase in b from 20 Å to 80 Å has a marginal effect on µ during single subband occupancy but improves µ during double subband occupancy through intersubband interaction.

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“…Such as other types of non-square wells, V-shaped QWs offer distinctive electronic and optical characteristic with stronger quantum confinement potentials compared to square type wells [23,24]. Furthermore, the feasible asymmetry tailoring via structure parameters made double V-shaped quantum wells (DVQWs) the subjects of some studies as given follows: The tunable nonlinear electron mobility by varying well width, barrier width, doping concentration and potential height of V-shaped double well in the presence of external electric field is examined in [24,25]. In these studies, the possible usage of that QW in mobility adjustment for fine-tuning of channel conductivity is illustrated.…”

Section: Introductionmentioning

confidence: 99%

Investigation on Nonlinear Optical Properties of Symmetric and Asymmetric Double V-Shaped Potential Wells with Structural Parameters and External Electromagnetic Fields

Durmuslar

2022

Preprint

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Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for both symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure are theoretically investigated. Responses of these coefficients to well widths, barrier widths and concentration of aluminum within the barrier as well as applied external electromagnetic fields are the subject of this study. The electronic spectra of the structures are obtained as a solution of Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated via the analytical expressions obtained by iterative solutions within compact density matrix approach. Although increasing barrier width and aluminum concentration act similar significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths acts differently for each configuration. Widening both wells in symmetric case moves the resonance peaks to lower energies, while the rise on only one well carries the resonance peaks to higher energies for asymmetric case. Enhancing both the electric and magnetic fields shift the resonance peaks to the blue for symmetric and also asymmetric wells. High dependency of the optical properties to the structural parameters and external electromagnetic fields as well as asymmetry of the wells is presented here in detail.

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Oscillation of Electron Mobility in V‐Shaped Double Quantum Well Structure Under Applied Electric Field

Cited by 5 publications

References 44 publications

Asymmetric doping induced nonlinear electron mobility in double V-shaped quantum well based FET structure under external electric field

Asymmetric doping induced nonlinear electron mobility in double V-shaped quantum well based FET structure under external electric field

Effect of structure parameters on electron mobility in asymmetric V-shaped double quantum well structure

Investigation on Nonlinear Optical Properties of Symmetric and Asymmetric Double V-Shaped Potential Wells with Structural Parameters and External Electromagnetic Fields

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