OTFT performance of air-stable ester-functionalized polythiophenes

Kazarinoff, Peter D.; Shamburger, Patrick J.; Ohuchi, Fumio S.; Luscombe, Christine K.

doi:10.1039/b927164c

Cited by 8 publications

(9 citation statements)

References 39 publications

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“…Such transistors have been realized experimentally, where SiO 2 acts as a substrate, and a polythiophene-based polymer behaves as sample. It has been demonstrated that such transistors are highly stable in air. − …”

Section: Applicationsmentioning

confidence: 99%

Polythiophene: From Fundamental Perspectives to Applications

et al. 2017

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The field of organic electronics has been heavily impacted by the discovery and development of π-conjugated conducting polymers. These polymers show great potential for integration into future optical and electronic devices due to their capacity to transition between semiconducting and conducting states as well as the ability to alter mechanical properties by controlled doping, chemical modification, and stacking or creating composites with other materials. Among π-conjugated polymers, polythiophene and its derivatives has been one of the most extensively studied and is widely investigated computationally and experimentally for use in electronic devices such as light-emitting diodes, water purification devices, hydrogen storage, and biosensors. Various theoretical modeling studies of polythiophene ranging from an oligothiophene approach to infinite chain lengths (periodic boundary conditions) have been undertaken to study a variety of electronic and structural properties of these polymers. In this review, we discuss the recent advances in the understanding of pristine polythiophene and its derivatives from fundamental perspectives to device applications.

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Section: Applicationsmentioning

confidence: 99%

Polythiophene: From Fundamental Perspectives to Applications

et al. 2017

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“…We were interested in exploring the potential of CDK in semiconducting polymers for field effect transistor and photosensing applications, since we envisaged that the molecular dipole introduced by the carbonyl group could facilitate close packing of the aromatic backbones, as required for good charge transport . In addition, the electron accepting nature of the bridging carbonyl was expected to increase both the polymer ionization potential, which has been shown to lead to improvements in p-type transistor stability, − and the polymer electron affinity, which may lead to the observation of electron transporting behavior.…”

Section: Introductionmentioning

confidence: 99%

Near Infrared Absorbing Soluble Poly(cyclopenta[2,1-b:3,4-b′]dithiophen-4-one)vinylene Polymers Exhibiting High Hole and Electron Mobilities in Ambient Air

et al. 2012

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We report the synthesis of two novel cyclopenta[2,1-b:3,4-b′]dithiophen-4-one monomers containing solubilizing alkyl groups in the peripheral 3,5 positions. Polymerization with (E)-1,2-bis(tributylstannyl)-ethylene under Stille coupling conditions afforded the first reported examples of soluble poly(cyclopentadithiophen-4-one)vinylenes. The resulting polymers absorb in the near-infrared, with a maximum thin film absorbance around 815 nm and have optical band gaps of 1.25 eV. The polymers exhibit promising ambipolar field effect transistor performance, with average saturated mobilities of 0.5 cm 2 V −1 s −1 for holes and 0.12 cm 2 V −1 s −1 for electrons. The ambipolar transistors operate in both the hole and electron transport regimes in ambient air. Prolonged exposure to ambient atmosphere leads to a gradual loss of the electron transport behavior, with little change observed in the p-type mobility.

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“…Further assessment of OTFT current-voltage characteristics allows the estimation of the effective channel mobility. The field effect mobility m of the fabricated device can be estimated using the equation: [22][23][24][25] where W and L are the width and length of the channel, C OX is the insulator capacitance per unit of the gate dielectric, and V T is the threshold voltage. The mobility was extracted from the saturation regime at a drain-source voltage of À60 V. The calculated value of the mobility for the transistor is 0.95 Â 10 À2 cm 2 V À1 s À1 , which to the best of our knowledge suggests that P1 possesses the highest field effect mobility among transparent polymers for transistors.…”

Section: Resultsmentioning

confidence: 99%