Out‐of‐band improvement by BPFs with multiple attenuation poles using a condition of variable coupling length of a parallel partially coupled‐line section
Abstract:assessment of the state-of-the-art 0.5-m bulk CMOS technology for RF applications, Int Electron Devices Mtg, 1995, pp. 721-724. 9. L.E. Larson, Silicon technology tradeoffs for radio-frequency/mixedsignal "systems-on-a-chip", IEEE
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