Fast carrier cooling is important for high power graphene based devices. Strongly Coupled Optical Phonons (SCOPs) play a major role in the relaxation of photoexcited carriers in graphene. Heterostructures of graphene and hexagonal boron nitride (hBN) have shown exceptional mobility and high saturation current, which makes them ideal for applications, but the effect of the hBN substrate on carrier cooling mechanisms is not understood.We track the cooling of hot photo-excited carriers in graphene-hBN heterostructures using ultrafast pump-probe spectroscopy. We find that the carriers cool down four times faster in the case of graphene on hBN than on a silicon oxide substrate thus overcoming the hot phonon (HP) bottleneck that plagues cooling in graphene devices.Graphene heterostructures have garnered a lot of interest in the last decade 1 . Recently developed fabrication techniques have made it possible to engineer devices with better transport, optical and thermal properties 2,3 . Hexagonal boron nitride (hBN) is a layered material with a hexagonal lattice similar to graphene with a lattice constant that is about 1.8% larger 3 . It is an insulator with a wide band gap and high dielectric constant making it a good candidate as a substrate for graphene devices. Heterostructures of graphene and hBN show much higher mobility compared to those using SiO2 as a substrate 2-4 . This improvement is a result of the hBN substrate being free of charged impurities and displacing the graphene away from the impurities in the SiO2 substrate 4 .As electronic devices continue to scale down in size and push power capabilities, heat management has become a critical issue. Relaxation dynamics of photoexcited (PE) carriers has been studied extensively by many groups using variety of techniques such as photocurrent measurement, Raman time resolved Raman spectroscopy, transport measurements and ultrafast pump-probe spectroscopy 5-7 etc. Upon photoexcitation (with an ultrafast pulse for example), electrons and holes are excited, into a highly non-thermal system. This bath of carriers exchanges energy among themselves through coulombic interactions and thermalize into a hot (~1000's K) Fermi-Dirac population