2009
DOI: 10.1149/1.3046003
|View full text |Cite
|
Sign up to set email alerts
|

Output Power Enhancement of Vertical-Injection Ultraviolet Light-Emitting Diodes by GaN-Free and Surface Roughness Structures

Abstract: Nitride-based UV, vertical-injection light-emitting diodes ͑VLEDs͒ with GaN-free and surface roughness structures operating at 365 nm were proposed and demonstrated by a combination of wafer bonding and laser lift-off processes. The GaN-free structure offers a promising potential for enhancing the light output of UV-VLEDs. The 3.2ϫ light output enhancement was performed by removing the GaN. With the help of adopting a roughened surface, the light-output power of the UV-VLEDs could be further enhanced by a fact… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
6
0

Year Published

2013
2013
2024
2024

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 14 publications
(6 citation statements)
references
References 13 publications
0
6
0
Order By: Relevance
“…Given these results, it is clear that we can fine-tune the emission of the 2D HOIPs based on “m” in the organic cation (B)­n-(CH 2 )­m-NH 3 . Both (PMA) 2 PbI 4 and (PEA) 2 PbBr 4 have been used to fabricate green and violet light-emitting diodes, respectively. , With regard to luminescence, the broader family of 2D HOIPs discussed here may therefore prove useful for application as green, violet, and ultraviolet light-emitting diodes, with the latter ultraviolet light emission being of particular interest . Notably, (PMA) 2 PbCl 4 , (NMA) 2 PbCl 4 , and (PMA) 2 PbBr 4 also exhibit separate, broad “white” emission in the long wavelength range (Figure S3), similar to the case previously reported for (PEA) 2 PbCl 4 and attributed to self-trapped excitons involving the organic cations …”
Section: Resultsmentioning
confidence: 96%
“…Given these results, it is clear that we can fine-tune the emission of the 2D HOIPs based on “m” in the organic cation (B)­n-(CH 2 )­m-NH 3 . Both (PMA) 2 PbI 4 and (PEA) 2 PbBr 4 have been used to fabricate green and violet light-emitting diodes, respectively. , With regard to luminescence, the broader family of 2D HOIPs discussed here may therefore prove useful for application as green, violet, and ultraviolet light-emitting diodes, with the latter ultraviolet light emission being of particular interest . Notably, (PMA) 2 PbCl 4 , (NMA) 2 PbCl 4 , and (PMA) 2 PbBr 4 also exhibit separate, broad “white” emission in the long wavelength range (Figure S3), similar to the case previously reported for (PEA) 2 PbCl 4 and attributed to self-trapped excitons involving the organic cations …”
Section: Resultsmentioning
confidence: 96%
“…Figure 19(a) shows the schematic of the devices showing the roughening surface with root-mean-square (rms) roughness of ∼398 nm by immersing the sample in 45 wt. % KOH at 110°C for 180 s. 102 Figure 19(b) shows the L-I-V characteristics of three samples emphasizing the enhancement in the overall performance toward surface-roughened LED. Furthermore, Chiang et al 103 achieved an enhancement in the output power by 525% and in the EQE by 6.5 times for a UVLED emitting at 365 nm, compared with a conventional LED, by a combination of the noninsulation current blocking layer, wafer bonding, laser lift-off, and surface treatment processes.…”
Section: Surface Texturingmentioning
confidence: 97%
“…Surface texturing architectures help to improve the surface emission area and increase the probability of photons to escape out of the surface by the angular randomization. 102 Lee et al 102 fabricated a UV-LED device emitting at 365 nm and obtained a total enhancement by a factor of 7.8 compared with the conventional UV-LED. This is attributed to the surface structuring, which exhibits random scattering effects.…”
Section: Surface Texturingmentioning
confidence: 99%
“…In addition, it is difficult for the photons to escape from the device due to the strong total internal reflection (TIR) effect. Therefore, improving LEE of DUV-LEDs is necessary, and several strategies have been proposed including nanowire structure [8], patterned sapphire substrates [9], surface roughing [10] and photonic crystal patterns [11]. Another effective way that placing metal nanoparticles on the p-GaN contact layer to stimulate localized surface plasmons (LSPs) coupling behavior is beneficial is that it enhances spontaneous emission rate and light extraction [12][13][14].…”
Section: Introductionmentioning
confidence: 99%