2016 International Conference on Applied Electronics (AE) 2016
DOI: 10.1109/ae.2016.7577266
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Output voltage and efficiency of novelty architecture of charge pump versus clock frequency and MOSFETs sizes

Abstract: Charge pump is circuit that produces voltage higher than supply voltage or negative voltage. Today, charge pumps became an essential parts of electronic equipment. The integration of charge pumps directly into the target system allows manufacturers to feed a complex system with many specific power requirements from a single source. However, charge pump efficiency is relatively small. This paper is devoted to questions of efficiency of presented variant of charge pump. Thus efficiency as dependence on number of… Show more

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Cited by 2 publications
(3 citation statements)
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“…For example, an RCP with a WDR usually suffers from a lower peak PCE compared to an RCP with a narrower dynamic range. This is because more power consumption is induced at the additional peripheral control blocks to achieve a WDR [103,104]. Similar to VCE and PCE, a high VCE does not guarantee a high PCE as the high output voltage usually comes with low current output, resulting in a low output power [104].…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…For example, an RCP with a WDR usually suffers from a lower peak PCE compared to an RCP with a narrower dynamic range. This is because more power consumption is induced at the additional peripheral control blocks to achieve a WDR [103,104]. Similar to VCE and PCE, a high VCE does not guarantee a high PCE as the high output voltage usually comes with low current output, resulting in a low output power [104].…”
Section: Discussionmentioning
confidence: 99%
“…After all, it is an impractical endeavor to design a perfect CP with optimal performance in every aspect. Apart from this, Figure 21(a) also provides lists of commonly tuned parameters including clock amplitude [10,16,53,105], N-stage [53,103,104], Cpump or Cout [10,12,95], frequency [15,62] , Rload [32,33] and CMOS technology node [32,106]. Here, Rload and CMOS technology node are included as one of the tunable parameters since both of them can be defined by the designer during the design process even though they are barely discussed in previous sections.…”
Section: Discussionmentioning
confidence: 99%
“…The main design aim of the charge-pump is to maximize its PCE. Based on Fig.8(a), the core elements that affects the PCE is the Rload [96], N-stage [54,64,66,79,97,98] and Cpump [99]. However, as described in Fig.8(a), there are contradicting trade-offs in achieving the desired specification such as startup time [79,85,100,101], Vout,cp, and area.…”
Section: Discussionmentioning
confidence: 99%