Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain

Kudara, Ken; Arai, M.; Suzuki, Yukiko; Morishita, Aoi; Tsunoda, Jun; Hiraiwa, Atsushi; Kawarada, Hiroshi

doi:10.1016/j.carbon.2021.11.034

Cited by 13 publications

(6 citation statements)

References 23 publications

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“…Considering the previously reported works in which the current density is normalized with respect to the gate length and gate width, even on the (001) and (111) single crystal diamond substrates. [ 4–7,38–42 ] This work breaks the record of | I D |* L G = 2000 µm mA mm −1 . This indicates that the (110) DC arc‐jet polycrystalline diamond substrate is a promising candidate for 2DHG diamond FETs.…”

Section: Resultssupporting

confidence: 53%

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

Zhu

Shao

Chan

et al. 2023

Adv Elect Materials

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Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the instability of the electrical conductivity. This work presents a metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a diamond substrate derived from a five‐inch (110) highly preferred polycrystalline diamond film. The MOSFETs with excellent performance are fabricated by combining an H‐terminated channel and an epitaxially grown boron‐doped layer as the source/drain contacts of the diamond devices. According to the electrical statistical results of ≈110 devices on the polycrystalline diamond substrate, 44% of devices show normally‐off operation with a maximum current density of 400 mA mm−1, while 56% of devices demonstrate normally‐on operation with a maximum current density of 525 mA mm−1. The normally‐off characteristics are more related to the higher amounts of nitrogen concentration than the grain boundaries. The stable boron‐doped source and drain provide a high concentration of holes, which facilitate transport in the surface p‐type channel induced by the H‐termination. The characteristics of the MOSFETs are inspiring for the fabrication of complementary inverter circuits on large diamond wafers.

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Section: Resultssupporting

confidence: 53%

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

Zhu

Shao

Chan

et al. 2023

Adv Elect Materials

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“…However, (111)-oriented diamonds are hard to be acquired and most of the reported H-diamond devices were fabricated on (001)-or (110)-oriented substrates. Only a few H-diamond MOSFETs on (111)-oriented surfaces were reported, and a high current density of over 1 A/mm and a high output power density of 3.6 W/mm at 1 GHz were achieved [13].…”

Section: Introductionmentioning

confidence: 99%

2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface

Qiao,

Dai,

et al. 2024

IEEE J. Electron Devices Soc.

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This paper presents high performance hydrogen-terminated diamond MOSFETs fabricated on a (111)-oriented single-crystal diamond substrate. The diamond surface was passivated by a high-quality Al2O3 grown by ALD at 350°C as well as a secondary passivation layer Si3N4 deposited by PECVD. After passivation, a low ohmic contact resistance Rc of 0.5 Ω•mm was obtained and the 2DHG sheet density was as high as 1.0×10 13 cm -2 with a corresponding mobility of 104 cm 2 /V•s. The fabricated diamond MOSFET with gate length of 0.5 μm showcased a high current density of 750 mA/mm, a low on-resistance of 24 Ω•mm, and a high off-state breakdown voltage of 117 V. Thanks to the high current density and low on-resistance, a record high output power density of 2.1 W/mm was achieved at 10 GHz with drain biased at a low voltage of -30 V. These results demonstrate that the output current and output power can be improved by using a (111)-oriented diamond, which is benefit for high-frequency and high-power RF devices.

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“…Thanks to the intrinsic high mobility of diamond, the quantum-confined 2DHG effectively proved diamond's potential for power electronics due to the high frequency and output current density. [17][18][19][20][21][22] As for the electrons, theoretical simulations suggest that a presumed 2DEG in the diamond hetero-interface can potentially exhibit exceptional mobility of over 3500 cm 2 V À1 s À1 at room temperature. 23 Device simulation has also suggested that a diamond FET with 2DEG can deliver outstanding performance.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional ambipolar carriers of giant density at the diamond/cubic-BN(111) interfaces: toward complementary logic and quantum applications

Zhu,

Su,

Ren

et al. 2023

Phys. Chem. Chem. Phys.

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Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain

Cited by 13 publications

References 23 publications

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface

Two-dimensional ambipolar carriers of giant density at the diamond/cubic-BN(111) interfaces: toward complementary logic and quantum applications

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