Over 1000 mW single mode operation of planar inner stripe blue‐violet laser diodes

Sasaoka, Chiaki; Fukuda, K.; Ohya, Masaki; Shiba, Kazuhiro; Sumino, Masayoshi; Kohmoto, Shigeru; Naniwae, K.; Matsudate, M.; Mizuki, E.; Masumoto, Ichiro; Kobayashi, Ryuji; Kudo, K.; Sasaki, T.; Nishi, Kentaro

doi:10.1002/pssa.200565237

Cited by 13 publications

(3 citation statements)

References 3 publications

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“…Moreover, it could be undesirable for ridge-waveguide BV-LDs to employ such a narrow stripe, which causes an increase in operating voltage and a decrease in maximum output power due to thermal rollover. To overcome these problems, we have proposed and demonstrated novel planar inner-stripe BV-LDs with AlN opticalconfinement and current-blocking layer [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

High-power operation of inner-stripe GaN-based blue-violet laser diodes

et al. 2007

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We review our recent progress in novel planar blue-violet laser diodes (BV-LDs). The planar BV-LDs are characterized by an inner-stripe waveguide formed with a buried AlN current-blocking layer and a wide regrown cladding layer that also acts as a current and heat spreader. These features enable high-power operation for BV-LDs thanks to their low electrical and low thermal resistance even with a narrow-stripe waveguide. In this paper, we report successful demonstration of the planar inner-stripe BV-LDs by utilizing low-temperature-grown AlN and the regrown cladding layer. Low electrical resistance of the regrown cladding layer was confirmed by scanning spread resistance microscopy. Heat spreading characteristics were also investigated by 2-dimensional thermal simulation. The fabricated BV-LDs with a 1.4-µm-wide stripe achieved a low threshold current of 32 mA, a low threshold voltage of 4.1 V and greater than 200-mW kink-free output power under CW operation. Moreover, the kink-free output level surpassed 1,000 mW for the 1.0-µm stripe BV-LDs under 0.03%-duty-pulsed operation. The BV-LDs operated stably for more than 1,000 hours at a high output power of 200 mW at 80 o C under a 50%-duty-pulsed condition. After the reliability test, transmission electron microscopy revealed no defect near the regrown interface of the tested LDs.

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Section: Introductionmentioning

confidence: 99%

High-power operation of inner-stripe GaN-based blue-violet laser diodes

et al. 2007

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“…For decades, the researchers were striving their efforts on reducing the threshold current [1][2][3][4][5], improving the output power [6][7][8][9], and expanding the wavelength range [10][11][12][13][14] among other things. They focus their attentions mainly on the behavior of LDs above the threshold region.…”

Section: Introductionmentioning

confidence: 99%

Stimulated emission in GaN-based laser diodes far below the threshold region

et al. 2014

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“…Moreover, ZnO has the same crystalline symmetries as GaN, with lattice mismatches of only 1.8 and 0.4% for the aand c-axis, respectively. 1) Therefore, ZnO is expected to be one of the more suited for GaN-based high power optical devices, i.e., a transparent electrode [2][3][4][5][6] for light-emitting diodes (LEDs) and an optical confinement layer 7) for laser diodes (LDs). Several research groups have focused their efforts on improving ohmic contacts at a ZnO/p-GaN interface.…”

Section: Introductionmentioning

confidence: 99%

Direct Heteroepitaxial Growth of ZnO over GaN Crystal in Aqueous Solution

Hamada

Ito

Nagao

et al. 2013

Jpn. J. Appl. Phys.

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We report on the structural and electrical properties of ZnO films grown on surface-treated GaN/Al2O3 substrates by chemical bath deposition. X-ray diffraction analysis indicated that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. The ZnO film exhibited n-type conduction with a carrier concentration of 6.9 ×1018 cm-3, an electron mobility of 41 cm2/(V·s), and a resistivity of 2.2 ×10-2 Ω·cm. A low specific contact resistivity of 4.3 ×10-3 Ω·cm2 was obtained at the ZnO/n-GaN interface. Additionally, the ZnO film exhibited high transparency in the visible and infrared region.

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Over 1000 mW single mode operation of planar inner stripe blue‐violet laser diodes

Cited by 13 publications

References 3 publications

High-power operation of inner-stripe GaN-based blue-violet laser diodes

High-power operation of inner-stripe GaN-based blue-violet laser diodes

Stimulated emission in GaN-based laser diodes far below the threshold region

Direct Heteroepitaxial Growth of ZnO over GaN Crystal in Aqueous Solution

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