Over 12% efficiency Cu&lt;inf&gt;2&lt;/inf&gt;ZnSn(SeS)&lt;inf&gt;4&lt;/inf&gt; solar cell via hybrid buffer layer

Hiroi, Homare; Kim, Jeehwan; Kuwahara, Masaru; Todorov, Teodor K.; Nair, Dhruv; Hopstaken, Marinus; Zhu, Yu; Gunawan, Oki; Mitzi, David B.; Sugimoto, H.

doi:10.1109/pvsc.2014.6925044

Cited by 10 publications

(6 citation statements)

References 1 publication

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“…The latter might be obtained by a further control of the remaining bulk electronic defects. Tuning of the buffer layer could lead to further improvements, as the dual buffer layer of CdS and In 2 S 3 proposed by others . However, the main challenge for the CZTSSe cells remains the large V OC deficit, which is the main issue identified by all the teams who have achieved the highest cell efficiencies at present.…”

Section: Resultsmentioning

confidence: 99%

Fine‐Tuning the Sn Content in CZTSSe Thin Films to Achieve 10.8% Solar Cell Efficiency from Spray‐Deposited Water–Ethanol‐Based Colloidal Inks

Larramona¹,

Levcenko

Bourdais³

et al. 2015

Advanced Energy Materials

142

106

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Thin film solar cells with Al/ITO/ZnO/CdS/CZTSSe/Mo‐glass structure are fabricated employing a fast and low‐cost preparation procedure using an aqueous ink deposited by nonpyrolytic spray, followed by high temperature crystallization and selenization steps. Capacitance–voltage measurements on previously reported devices with >8% efficiency under 1 sun irradiation show a charge carrier density of the order of 1017 cm−3. Moreover, admittance spectroscopy indicates the presence of mid‐bandgap defects that are tentatively attributed to a Sn deficit in the film. In order to reduce the number of these deep defects within the active layer of our solar cells, the Sn content is tuned in the precursor ink. Their morphology, elemental composition, crystal phases, capacitance–voltage profiling, admittance, photoluminescence, and photovoltaic performances are characterized. The results indicate that tuning the Sn content offers a strong leverage upon some key properties of the active layer, in particular the grain size, and the charge carrier and defect density. By employing this leverage to optimize the performance of our CZTSSe layers, the cell performances are increased to 10.0% without antireflection coating (ARC) and to 10.8% (on 0.25 cm2) with an ARC.

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Section: Resultsmentioning

confidence: 99%

Fine‐Tuning the Sn Content in CZTSSe Thin Films to Achieve 10.8% Solar Cell Efficiency from Spray‐Deposited Water–Ethanol‐Based Colloidal Inks

Larramona¹,

Levcenko

Bourdais³

et al. 2015

Advanced Energy Materials

142

106

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“…Promisingly, the In substituted CZTSSe alloy (CZTISSe) has increased free hole density and mobility via the formation of an In Sn – acceptor, ultimately mitigating the open circuit voltage deficiency and improving device efficiency more or less . To date, 10–12% efficient selenium-rich CZTSSe devices have been successfully achieved by post-annealing of sputtered or hydrazine-processed metal chalcogenide precursor layers at temperatures greater than 500 °C for a short dwell. − Generally, the technical route based on precursor layer preparation plus high temperature selenization has been widely applied into highly efficient CZTSSe solar devices. However, the layer deposition using vacuum sputtering or hydrazine solution may not meet the requirement for low cost and environmental benignity associated with manufacture.…”

Section: Introductionmentioning

confidence: 99%

The Interfacial Reaction at ITO Back Contact in Kesterite CZTSSe Bifacial Solar Cells

Chu

Jiang

et al. 2015

ACS Sustainable Chem. Eng.

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The synthesis route based on co-electroplating of copper, zinc, tin, and chalcogen precursor plus post-chalcogenization demonstrates the tremendous potential to realize industrial manufacture of earthabundant kesterite materials for sustainable photovoltaics. Exploration of appropriate annealing temperature is significant to gain insight into the crystallization of kesterite solar materials on the back contacts based on transparent conducting oxides in bifacial device. The Cu 2 ZnSn(S x , Se 1−x ) 4 (CZTSSe) absorber films have been fabricated by post-selenizing coelectroplated metal−sulfide precursors on ITO substrate at 500, 525, and 550 °C. Experimental proof, including electron microscopies, X-ray diffraction, optical transmission/reflection spectra, polarized Raman, and IR techniques, is presented for the interfacial reaction between the ITO back contact and CZTSSe absorber. This reaction contributes to substitutional diffusion of In into CZTSSe (CZTISSe) to a considerable extent and formation of a SnO 2 interfacial layer when the temperature is higher than 500 °C. In incorporation does not much change the optical absorption, band gap, and phonon spectra of CZTSSe; whereas, it leads to lattice expansion more or less. The bifacial kesterite solar devices are successfully fabricated, and the device performance is analyzed and discussed.

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“…Kesterite thin films based on sulfide Cu 2 ZnSnS 4 (CZTS), its selenide derivative Cu 2 ZnSnSe 4 (CZTSe), and sulfur–selenium alloy Cu 2 ZnSn(S x , Se 1– x ) 4 (CZTSSe) are promising absorber materials for sustainable photovoltaics, because of the abundance, environmental benignity, and industrial compatibility of the constituent elements. To date, more than 12, 9, and 9% efficiencies have been achieved based on sulfur–selenium alloy CZTSSe, , pure CZTS, and selenide CZTSe, respectively. However, the device efficiency is limited by the dominant issue of high open circuit voltage ( V OC ) deficits.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of In-Substituted CZTS Thin Film and Bifacial Solar Cell

Chu

Jiang³

et al. 2014

ACS Appl. Mater. Interfaces

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Implementing bifacial photovoltaic devices based on transparent conducting oxides (TCO) as the front and back contacts is highly appealing to improve the efficiency of kesterite solar cells. The p-type In substituted Cu2ZnSnS4 (CZTIS) thin-film solar cell absorber has been fabricated on ITO glass by sulfurizing coelectroplated Cu-Zn-Sn-S precursors in H2S (5 vol %) atmosphere at 520 °C for 30 min. Experimental proof, including X-ray diffraction, Raman spectroscopy, UV-vis-NIR transmission/reflection spectra, PL spectra, and electron microscopies, is presented for the interfacial reaction between the ITO back contact and CZTS absorber. This aggressive reaction due to thermal processing contributes to substitutional diffusion of In into CZTS, formation of secondary phases and electrically conductive degradation of ITO back contact. The structural, lattice vibrational, optical absorption, and defective properties of the CZTIS alloy absorber layer have been analyzed and discussed. The new dopant In is desirably capable of improving the open circuit voltage deficit of kesterite device. However, the nonohmic back contact in the bifacial device negatively limits the open circuit voltage and fill factor, evidencing by illumination-/temperature-dependent J-V and frequency-dependent capacitance-voltage (C-V-f) measurements. A 3.4% efficient solar cell is demonstrated under simultaneously bifacial illumination from both sides of TCO front and back contacts.

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Over 12% efficiency Cu<inf>2</inf>ZnSn(SeS)<inf>4</inf> solar cell via hybrid buffer layer

Cited by 10 publications

References 1 publication

Fine‐Tuning the Sn Content in CZTSSe Thin Films to Achieve 10.8% Solar Cell Efficiency from Spray‐Deposited Water–Ethanol‐Based Colloidal Inks

Fine‐Tuning the Sn Content in CZTSSe Thin Films to Achieve 10.8% Solar Cell Efficiency from Spray‐Deposited Water–Ethanol‐Based Colloidal Inks

The Interfacial Reaction at ITO Back Contact in Kesterite CZTSSe Bifacial Solar Cells

Characteristics of In-Substituted CZTS Thin Film and Bifacial Solar Cell

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