reveal the bright future of this greenenergy technology. [1][2][3] Exciton dissociation into free charges is the most important optoelectronic process, which is driven by the energy-level difference between donor and acceptor materials. [4,5] For OSCs utilizing fullerene derivatives as electron acceptors, a lowest unoccupied molecular orbital (LUMO) offset [ΔE LUMO = E LUMO(D) − E LUMO(A) ] of no less than 0.30 eV was generally proposed to guarantee efficient electron transfer. [6][7][8] However, this leads to large energy losses (>0.60 eV), as defined by E loss = E g opt − qV oc , (E g opt is the optical bandgap, V oc is the open-circuit voltage, and q is elementary charge), and limits the power conversion efficiency (PCE) to less than 12% [9][10][11][12][13][14] after decades of effort. Thus far, the development of donor (D)-acceptor (A)-type nonfullerene molecular acceptors (NFAs) with well-tunable electronic structures has opened up a great opportunity in this active topic because these NFAs have realized high PCEs over 15%. [15][16][17][18][19][20][21] To form a complementary absorption, current popular NFA OSCs are based on the combination of a widebandgap donor and a narrow-bandgap acceptor. [22][23][24][25][26][27][28][29][30][31][32][33] For such a material combination, a large ΔE LUMO always exists, which reduces the highest occupied molecular orbital (HOMO) offset [ΔE HOMO = E HOMO(D) − E HOMO(A) ] to minimize energy loss [34][35][36][37] while enhancing the light collection in near-infrared (NIR)
Current research indicates that exciton dissociation into free charge carriers can be achieved in material combinations with the highest occupied molecular orbital (HOMO) offset lowered to 0 eV in non-fullerene organic solar cells. However, the quantitative relationship between the HOMO offset and exciton dissociation has not been established because of the difficulty inachieving continuously tunable HOMO offsets. Here, the binary blends of PTQ10:ZITI-S and PTQ10:ZITI-N are combined to form the positive and negative HOMO offsets of 0.20 and −0.07 eV, respectively. While the PTQ10:ZITI-S binary blend delivers a decent power conversion efficiency (PCE) of 10.69% with a shortcircuit current (J sc ) of 16.94 mA cm −2 , the PTQ10:ZITI-N with the negative offset shows a much lower PCE of 7.06% mainly because of the low J sc of 12.03 mA cm −2 . Because the tunable HOMO levels can be realized in organic semiconducting alloys based on ZITI-N and ZITI-S acceptors, the transformation of the HOMO energy offset from negative to positive values is achieved in the PTQ10:ZITIN:ZITI-S ternary blends, delivering much-improved PCEs up to 13.26% with a significant, 74% enhancement of J sc to 20.93 mA cm −2 .With detailed investigations, the study reveals that the minimum HOMO offset of ≈40 meV is required to achieve the most-efficient exciton dissociation and photovoltaic performance.