2020
DOI: 10.1002/pssa.202000278
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Over 59 mV pH−1 Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron‐Doped Diamond Solution‐Gate Field‐Effect Transistors

Abstract: pH sensing facilitates many substantial aspects of the society such as chemical laboratory analysis, agriculture, or water and soil qualities. However, existing pH sensors have problems and limitations such as fragility, hysteresis, or slow responding time. In this research, a new method utilizing fluorocarbon thin film via fluorine termination and boron‐doped diamond (BDD) solution‐gate field‐effect transistors (SGFETs) for pH sensing is developed for the first time. The fluorocarbon film device demonstrates … Show more

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Cited by 6 publications
(7 citation statements)
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“…20 Many research works have been developed to explore the application of diamond solution-gate filed-effect transistor (SGFET) in biosensing performance. [21][22][23] Compared with siliconbased ion-sensitive field FET (Si-ISFET), the conductive channels of diamond SGFET are exposed directly to the electrolyte solution without a gate insulator. 24 Since the channel surface of Si-ISFET must be covered by relatively thick insulating layers, which can protect against the invasion of ions from solution but causing a small capacitance, which restricts the charge translation from electrolyte to the channel surface, resulting a decrease of sensitivity.…”
mentioning
confidence: 99%
“…20 Many research works have been developed to explore the application of diamond solution-gate filed-effect transistor (SGFET) in biosensing performance. [21][22][23] Compared with siliconbased ion-sensitive field FET (Si-ISFET), the conductive channels of diamond SGFET are exposed directly to the electrolyte solution without a gate insulator. 24 Since the channel surface of Si-ISFET must be covered by relatively thick insulating layers, which can protect against the invasion of ions from solution but causing a small capacitance, which restricts the charge translation from electrolyte to the channel surface, resulting a decrease of sensitivity.…”
mentioning
confidence: 99%
“…The diamond SGFET device design is similar to those reported in our previous reports and is shown in Fig. 1 [12,15]. The polycrystalline diamond substrates were first cleaned in a mixture of nitric acid (HNO3) and sulfuric acid (H2SO4) with a ratio of 1:3 at 200 °C for 30 minutes.…”
Section: Methodsmentioning
confidence: 92%
“…We have reported diamond SGFETs where the semiconductor surface was directly immersed in electrolyte solutions and the drain current was controlled by an electric double layer capacitor at the diamond surface [10]. We have also reported diamond SGFETs utilizing various functional groups including hydrogen, oxygen, nitrogen, and fluorine to achieve excellent pH sensing capabilities or complete pH insensitivity [11][12][13][14][15]. Like most ISFETs, a silver/silver chloride (Ag/AgCl) reference electrode has been commonly used as the gate electrode for diamond SGFETs.…”
Section: Introductionmentioning
confidence: 99%
“…The sensitivities of 41 and 52 µS/pH (CaCl 2 ) for red and bentonite soil samples were achieved with response and recovery times of 10 and 30 s, respectively, indicating the potential applicability of the PANI/SU-8 composite microsensor to measuring variations in soil pH important for precision agriculture applications. Chang et al proposed a new method utilizing a fluorocarbon thin film via fluorine termination and boron-doped diamond (BDD) solution-gate field effect transistors (SGFETs) for pH sensing with potential agriculture applications [112]. The developed device demonstrated high pH sensitivities of 67.4 and 34.9 mV/pH in acid and alkaline pH regions, respectively.…”
Section: Ph Soil Salinity and Other Macroelementsmentioning
confidence: 99%