2022
DOI: 10.1039/d2ta06565g
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Overcoming the limitations of low-bandgap Cu2ZnSn(S,Se)4devices under indoor light conditions: from design to prototype IoT application

Abstract: With the growing need for cost-effective and sustainable Internet of things (IoT) technologies, kesterite-based solar cells are gaining popularity. We report the fabrication of an efficient CZTSSe absorber layer with...

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Cited by 3 publications
(2 citation statements)
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“…Figure d shows SCR profiles of fabricated devices, and CZTSSe-A, CZTSSe-N, and CZTSSe-C solar cells exhibited W d values of 71, 100, and 110 nm and N C–V values of 8.18 × 10 16 , 6.97 × 10 16 , and 7.43 × 10 16 cm –3 , respectively. It is widely acknowledged that a narrow SCR can cause a loss of V OC due to tunneling and insufficient separation of charge carriers . Conversely, a wider and optimal SCR is desirable for improving the separation and collection of charge carriers .…”
Section: Resultsmentioning
confidence: 99%
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“…Figure d shows SCR profiles of fabricated devices, and CZTSSe-A, CZTSSe-N, and CZTSSe-C solar cells exhibited W d values of 71, 100, and 110 nm and N C–V values of 8.18 × 10 16 , 6.97 × 10 16 , and 7.43 × 10 16 cm –3 , respectively. It is widely acknowledged that a narrow SCR can cause a loss of V OC due to tunneling and insufficient separation of charge carriers . Conversely, a wider and optimal SCR is desirable for improving the separation and collection of charge carriers .…”
Section: Resultsmentioning
confidence: 99%
“…It is widely acknowledged that a narrow SCR can cause a loss of V OC due to tunneling and insufficient separation of charge carriers. 36 Conversely, a wider and optimal SCR is desirable for improving the separation and collection of charge carriers. 37 The SCR width in the p-type region is related to (1) electron doping in CdS and (2) hole doping in the kesterite region.…”
mentioning
confidence: 99%