Overdamped Nb∕Al–AlOx∕Nb Josephson junctions

Lacquaniti, V.; Cagliero, C.; Maggi, S.; Steni, R.

doi:10.1063/1.1856135

Cited by 28 publications

(13 citation statements)

References 13 publications

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“…Recent experimental works led to the realization of overdamped Josephson junctions with non-hysteretic current voltage characteristics and high temperature stability [19][20][21][22][23][24]. These devices, realized with the possibility of tuning the internal damping with temperature, can be good candidates to measure the escape time from the metastable state, i.e.…”

Section: Introductionmentioning

confidence: 99%

Non-Gaussian noise effects in the dynamics of a short overdamped Josephson junction

2010

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Abstract. The role of thermal and non-Gaussian noise on the dynamics of driven short overdamped Josephson junctions is studied. The mean escape time of the junction is investigated considering Gaussian, Cauchy-Lorentz and Lévy-Smirnov probability distributions of the noise signals. In these conditions we find resonant activation and the first evidence of noise enhanced stability in a metastable system in the presence of Lévy noise. For Cauchy-Lorentz noise source, trapping phenomena and power law dependence on the noise intensity are observed.

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Section: Introductionmentioning

confidence: 99%

Non-Gaussian noise effects in the dynamics of a short overdamped Josephson junction

2010

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“…However, a complete analysis of the distribution of for all the fabricated junctions has not shown a clear dependence of this parameter on [6].…”

Section: Methodsmentioning

confidence: 89%

“…The authors have measured several overdamped SIS junctions, fabricated according to [6]. The base and top Nb films are 150 nm thick and are deposited at a rate of 6.5 nm/s.…”

Section: Methodsmentioning

confidence: 99%

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RF Properties of Overdamped SIS Junctions

Lacquaniti

Cagliero

Maggi

et al. 2005

IEEE Trans. Appl. Supercond.

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A new type of nonhysteretic Josephson junction suitable for applications in voltage metrology has been developed. These junctions derive from the Nb Al AlO Nb SIS junctions using a relatively thick Al layer oxidized at a low value of oxygen exposure. This produces junctions with reproducible and spatially homogeneous -characteristics, having current densities ranging from 10 3 to more than 2 10 4 A cm 2 and characteristic voltages up to 0.40 mV. The authors report here the rf response of these junctions at 70 GHz. The authors have measured the dependence of the rf-induced steps on the microwave power and the stability of the steps, in view of a future application of these junctions to an ac Josephson voltage standard.

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“…Even more complex circuits, comprehending RSFQ electronics as a pattern generator of pulses, followed by semiconductor amplifier and a Josephson junction series array as a quantizer are studied, and realization of preliminary building blocks is in progress. The main difference respect to the structure of the basic Nb/AlOx/Nb SIS junctions is the thickness of the aluminum film which is increased at tens of nm, up to about 100 nm, and the augmented transparency of the AlOx [53], [54].…”

Section: Application To Rsfqmentioning

confidence: 99%