Overgrowth of Bi<sub>2</sub>Te<sub>3</sub> nanoislands on Fe-based epitaxial ferromagnetic layers

Takagaki, Y.; Herfort, J.; Ramsteiner, M.; Jahn, U.; Jenichen, B.

doi:10.1039/c8ce00882e

Cited by 5 publications

(5 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The study of FMM–TI heterostructures has mainly been motivated by the prospect of efficient spintronic devices, as TIs are known to generate high spin–orbit torque. [ 136,137 ] Various growth methods have been explored to synthesize such heterostructures, including laser molecular beam epitaxy (LMBE), [ 138,139 ] molecular beam epitaxy (MBE), [ 140 ] laser ablation deposition, [ 141 ] hot‐wall epitaxy, [ 142 ] metal organic chemical vapour deposition (MOCVD), [ 143 ] radio‐frequency (RF) magnetron sputtering, [ 144 ] etc. Even though proximity coupling has been successfully achieved in FMM–TI heterostructures, [ 145,146 ] the FMM electrically shorts the TI channel, making it difficult to detect any signature of magnetization in the TI in transport experiments.…”

Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

“…Indeed, diffusion of magnetic ions into TIs and formation of intermediate phases at the interface has been one of the issues plaguing this field. [ 142–144 ] For example, Chang et al. [ 140 ] studied Permalloy (Py; Ni 80 Fe 20 ) and Py‐Bi 2 Se 3 heterostructures.…”

Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

See 1 more Smart Citation

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

et al. 2021

View full text Add to dashboard Cite

Inducing long‐range magnetic order in 3D topological insulators can gap the Dirac‐like metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low‐energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. This review focuses on one strategy: inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. The unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity‐coupled magnetic order in topological insulators are discussed. Some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, are also highlighted, and the authors conclude with an outlook on remaining challenges and opportunities in the field.

show abstract

Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

et al. 2021

View full text Add to dashboard Cite

show abstract

“…The study of FMM-TI heterostructures has mainly been motivated by the prospect of efficient spintronic devices, as TIs are known to generate high spin-orbit torque [123,124]. Various growth methods have been explored to synthesize such heterostructures, including laser molecular beam epitaxy (LMBE) [125,126], molecular beam epitaxy (MBE) [127], laser ablation deposition [128], hot-wall epitaxy [129], metal organic chemical vapour deposition (MOCVD) [130], radio-frequency (RF) magnetron sputtering [131] etc. Even though proximity coupling has been successfully achieved in FMM-TI heterostructures [132,133], the FMM electrically shorts the TI channel, making it difficult to detect any signature of magnetization in the TI in transport experiments [128].…”

Section: Ferromagnetic Metal (Fmm)mentioning

confidence: 99%

“…A material-dependent extrinsic origin of AHE, caused by local doping or diffusion of ferromagnetic atoms can be a confounding issue. Indeed, diffusion of magnetic ions into TIs and formation of intermediate phases at the interface has been one of the issues plaguing this field [129][130][131]. For example, Chang et al [127] studied Permalloy (Py; Ni 80 Fe 20 ) and Py-Bi 2 Se 3 heterostructures.…”

Section: Ferromagnetic Metal (Fmm)mentioning

confidence: 99%

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Bhattacharyya,

Akhgar,

Gebert

et al. 2020

Preprint

View full text Add to dashboard Cite

Inducing long-range magnetic order in three-dimensional topological insulators can gap the Diraclike metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. In this review, we focus on one strategy, inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. We discuss the unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity-coupled magnetic order in topological insulators. We also highlight some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, and we conclude with an outlook on remaining challenges and opportunities in the field.

show abstract

“…Fe is an element that has been used as a dopant in bismuth chalcogenides with the purpose of studying and modifying the magnetic properties in Bi 2 Se 3 and Bi 2 Te 3 [31][32][33][34][35][36]. Introducing magnetic atoms into bismuth chalcogenides can modulate the Fermi level in the exchange gap resulting in a quantum Hall effect at zero magnetic field [37], known as Quantum Anomalous Hall Effect [38][39][40], with other interesting effects, as the topological magnetoelectric effect [37], magneto-optical effect [41], allowing a new approach to develop electronic devices with a dissipation less edge transport in low-power electronic circuits to be applied in low- energy consumption spintronics and topological quantum computing [42].…”

Section: Introductionmentioning

confidence: 99%

DFT calculations of the structural, elastic, and electronic properties of (Bi_1−xFe_x)₂Te₃ chalcogenides

Arévalo-López,

Pilo,

Rosas-Huerta

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

The crystal structure and elastic and electronic properties of (Bi1-xFex)2Te3 were studied by first-principles calculations within the Density Functional Theory (DFT) scheme. We found that at zero GPa, the lattice parameters for Bi2Te3 are in good agreement with the available experimental and theoretical data. As Fe replaces bismuth, the lattice parameter a increases while c decreases, changing the unit cell volume. According to Born’s structural stability criterion, the system is mechanically stable. Poisson’s ratio suggests a change from brittle to ductile behavior for (Bi1-xFex)2Te3 as iron increases. Also, Poisson’s ratio indicates that there is an ionic-covalent bond for x = 0.00 and behave as a metal as iron content increases. Vickers hardness decreases its value as Fe is introduced in the compound. Band structure calculations show that the results with spin orbit coupling (SOC) and without SOC are in good agreement with the experimental results. With SOC, a direct band gap at the  point is obtained with Eg = 0.138 eV concerning the 0.226 eV obtained without SOC. An evident modification of crystal structure in (Bi1-xFex)2Te3 shows a consistent trend, indicating a significant impact of iron incorporation on the structural properties. The electronic properties show a significant transformation with the introduction of iron, Bi2Te3 is characterized by a band gap, through iron doping the electronic structure shows a complete elimination of the band gap, marking a transition from semiconductor towards a conductor-like behavior. Density of states analysis provided insight into these changes, illustrating a modulation of electronic properties dependent on iron content.

show abstract

Overgrowth of Bi₂Te₃ nanoislands on Fe-based epitaxial ferromagnetic layers

Abstract: Bi2Te3 is deposited by hot wall epitaxy in an attempt to form nanosheets on epitaxially-grown ferromagnetic layers of Fe, Fe3Si and Co2FeSi.

Cited by 5 publications

References 38 publications

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

DFT calculations of the structural, elastic, and electronic properties of (Bi_1−xFe_x)₂Te₃ chalcogenides

Contact Info

Product

Resources

About

Overgrowth of Bi2Te3 nanoislands on Fe-based epitaxial ferromagnetic layers

Abstract: Bi2Te3 is deposited by hot wall epitaxy in an attempt to form nanosheets on epitaxially-grown ferromagnetic layers of Fe, Fe3Si and Co2FeSi.

Cited by 5 publications

References 38 publications

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

DFT calculations of the structural, elastic, and electronic properties of (Bi1−xFex)2Te3 chalcogenides

Contact Info

Product

Resources

About

Overgrowth of Bi₂Te₃ nanoislands on Fe-based epitaxial ferromagnetic layers

DFT calculations of the structural, elastic, and electronic properties of (Bi_1−xFe_x)₂Te₃ chalcogenides