Overlay metrology simulations: analytical and experimental validations

Seligson, Joel L.; Golovanevsky, Boris; Poplawski, J.; Adel, Mike; Silver, Richard M.

doi:10.1117/12.483661

Cited by 5 publications

(2 citation statements)

References 4 publications

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“…Basically, Maxwell's equation is solved by implementing RCWA for near field calculation, and far field calculation is following using high NA imaging algorithm [4]. Figure 3 is a screen capture of the simulator's user interface.…”

Section: Methodsmentioning

confidence: 99%

Overlay metrology for dark hard mask process: simulation and experiment study

Shin¹,

Chalykh²,

Kang³

et al. 2007

SPIE Proceedings

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Simulation and experimental study results are reported to solve align/overlay problem in dark hard mask process in lithography. For simulation part, an in-house simulator, which is based on rigorous coupled wave analysis and Fourier optics method of high NA imaging, is used. According to the simulation and experiment study, image quality of alignment and overlay marks can be optimized by choosing hard mask and sub-film thickness carefully for a given process condition. In addition, it is important to keep the specification of film thickness uniformity within a certain limit. Simulation results are confirmed by experiment using the state of art memory process in Samsung semiconductor R&D facility.

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Section: Methodsmentioning

confidence: 99%

Overlay metrology for dark hard mask process: simulation and experiment study

Shin¹,

Chalykh²,

Kang³

et al. 2007

SPIE Proceedings

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show abstract

“…[1][2][3][4][5] However, the mark selection procedure using real process wafers was time consuming because of numerous experimental evaluations of the mark signal and overlay accuracy. Though mark selection is done with great care, issues concerning the mark frequently arise in production.…”

Section: Introductionmentioning

confidence: 99%

Alignment mark signal simulation system for the optimum mark feature selection

Satō

Endo

Higashiki

et al. 2005

J. Micro/Nanolith. MEMS MOEMS

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Recently, requirements concerning overlay accuracy have become much more restrictive. For the accurate overlay, signal intensity and wave form from the topographical alignment mark have been examined by signal simulation. However, even if the results were in good agreement with actual signal profiles, it would be difficult to select particular alignment marks at each mask level by the signal simulation. Therefore, many mark candidates are left in the kerf area after mass production. To facilitate the selection, we propose a mark TCAD system. It is a useful system for the mark selection with the signal simulation performed in advance. In our system, the alignment mark signal can be easily simulated after input of some process material parameters and process of record (POR). The POR is read into the system and a process simulator makes stacked films on a wafer. Topographical marks are simulated from the stacked films and the resist pattern. The topographical marks are illuminated and reflected beams are produced. Imaging of the reflected beams through inspection optics is simulated. In addition, we show two applications. This system is not only for predicting and showing a signal wave form, but is also helpful for finding the optimum marks.

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Through-focus technique for grating linewidth analysis with nanometer sensitivity

Liu

Smith³

2006

Opt. Eng

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Overlay metrology simulations: analytical and experimental validations

Cited by 5 publications

References 4 publications

Overlay metrology for dark hard mask process: simulation and experiment study

Overlay metrology for dark hard mask process: simulation and experiment study

Alignment mark signal simulation system for the optimum mark feature selection

Through-focus technique for grating linewidth analysis with nanometer sensitivity

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