Overlay stability control in IBO measurement using rAIM target

Park, Nahee; Lee, Dohwa; Liu, Liu; Zhou, Xuefei; Su, Hongpeng; Choi, DongSub; Zhou, Wayne; Spielberg, Hedvi; Megged, Efi; Dror, Chen; Shaphirov, Diana; Liu, Zephyr; Ghinovker, Mark; Lee, Dongyoung; Yeon, Hongbok; Kim, Hyun-Jun; Park, Sukwon; Kim, Bohye; Lee, Honggoo; Lee, Sang-Ho

doi:10.1117/12.2608053

Cited by 3 publications

(3 citation statements)

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“…To sum this section up, we observe that by applying the corrected projection method, one can achieve accurate OVL measurements with acceptable performance (the full and half target OVL differences may be attributed to a target noise, see [3]), while the target size is two times smaller (for the most target locations in the field).…”

Section: Half Targetsmentioning

confidence: 94%

Small imaging overlay metrology targets for advance nodes

Feler

Shaphirov

Ghinovker

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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Scribe line width reduction and high-order scanner correctibles are driving overlay (OVL) target size reduction. Shrinking imaging-based overlay (IBO) target size for standard target types, such as AIM® or BiB, is not possible without a performance impact. In this paper, new target layouts and supporting OVL tool setup methods will be explored to enable small OVL targets to meet performance, accuracy, and robustness requirements. Two approaches have been explored: (1) measuring smaller grating pitches utilizing oblique illumination, and (2) measuring targets not obeying 180° rotational symmetry requirement (half-targets). Each of these approaches allows shrinking conventional imaging OVL target area by a factor of two. Evaluation results are reviewed in this paper and further target size reduction is presented.

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Section: Half Targetsmentioning

confidence: 94%

Small imaging overlay metrology targets for advance nodes

Feler

Shaphirov

Ghinovker

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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“…Conventionally, there are two types of overlay measurement technologies: key-based overlay and in-cell overlay. Key-based overlay methods analyze the alignment of key patterns between chips to measure overlay [1][2][3] while in-cell overlay methods analyze the misalignment of device patterns directly [4]. However, as device dimensions' shrink and manufacturing processes become more complex, accurately measuring and controlling overlay errors becomes increasingly challenging.…”

Section: Introductionmentioning

confidence: 99%

Massive overlay metrology solution by realizing imaging Mueller matrix spectroscopic ellipsometry

Son

Hwang

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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In recent years, the overlay specifications of advanced semiconductor devices have become extremely stringent. This challenging situation becomes severe for every new generation of the device development. However, conventional overlay metrology systems have limited throughput due to their point-based nature. Here, we first demonstrate the novel imaging Mueller-matrix spectroscopic ellipsometry (MMSE) technique, which can measure the overlay error of all cell blocks on a device wafer with extremely high throughput, much faster than conventional point-based spectroscopic ellipsometry (SE) technologies. It provides the super large field of view (FOV) ~ 20 × 20 mm2 together with high sensitivity based on Mueller information, which will be truly innovated solution not only for the overlay metrology, but also for critical dimension (CD) measurement, eventually maximizing process control and productivity of advanced node.

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“…Recently a new target type, rAIM (robust AIM), was developed based on the optical Moiré effect [6]- [8]. For rAIM, the coarse pitch of each layer is much smaller (200-600 nm) than that of a standard AIM (1100-1900 nm).…”

Section: Introductionmentioning

confidence: 99%

OPO improvements by moiré effect-based imaging

Li¹,

Lim

Park³

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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With the continuous shrinking of semiconductor device nodes, the reduction of on-product overlay (OPO) becomes extremely critical for high-yield IC (Integrated Circuit) manufacturing. This requires accurate overlay (OVL) process control which can be better achieved by using an optimized OVL target design and a more advanced metrology platform. The novel rAIM® imaging-based-overlay (IBO) target, which has a grating-over-grating structure with significantly smaller pitch sizes as compared to the standard advanced-imaging-metrology (AIM®) target, can improve OVL measurement accuracy by adopting a more device-compatible design with high Moiré sensitivity. This paper demonstrates the advantages of rAIM targets by comparing and quantifying their performance to standard AIM targets through key parameters including raw OVL, residuals, precision, and total measurement uncertainty (TMU). We also present the performance of rAIM targets on different OVL metrology platforms. We conclude that with an optimized target design and an advanced OVL measurement platform, rAIM targets can be an ideal overlay metrology solution for advanced dynamic random-access memory (DRAM) devices.

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Overlay stability control in IBO measurement using rAIM target

Cited by 3 publications

References 0 publications

Small imaging overlay metrology targets for advance nodes

Small imaging overlay metrology targets for advance nodes

Massive overlay metrology solution by realizing imaging Mueller matrix spectroscopic ellipsometry

OPO improvements by moiré effect-based imaging

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