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Itoh, Tadatsugu

doi:10.1016/b978-0-444-87280-7.50006-7

Cited by 6 publications

(2 citation statements)

References 13 publications

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“…Atomic H (H at ) is our atom of choice. Highly reactive atoms and low-energy ions are finding increased use in the low-pressure, collision-free environment typical of molecular beam epitaxy and related growth methods …”

Section: Free Radical Precursors and Atomic Coreactantsmentioning

confidence: 99%

Surface Chemistry in the Chemical Vapor Deposition of Electronic Materials

Gates¹

1996

Chem. Rev.

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Section: Free Radical Precursors and Atomic Coreactantsmentioning

confidence: 99%

Surface Chemistry in the Chemical Vapor Deposition of Electronic Materials

Gates¹

1996

Chem. Rev.

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“…Thin films of conductors, insulators, and semiconductors used in the fabrication of microelectronic devices, 2 high-precision mirrors, and thermal barrier coatings used in gas turbine engines to improve performance and reliability are some examples of the applications of thin films. Among the various methods that can be used to deposit thin films including chemical vapor deposition, 3 molecular beam epitaxy, 4 sputtering of particles by energetic ion bombardment, 5 etc., the electronbeam physical vapor deposition (EBPVD) remains one of the most widely used techniques. 6 Some of the advantages 7 of EBPVD include its wide range of deposition rates from 0.01 to 100 lm=min, favorable low stress levels in the deposited films, well-controlled grain structure, and efficient energy utilization.…”

Section: Introductionmentioning

confidence: 99%

Direct simulation Monte Carlo study of effects of thermal nonuniformities in electron-beam physical vapor deposition

Venkattraman

Alexeenko

2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In a typical electron-beam physical vapor deposition system, there is limited control over how the high-power electron beam heats the metal surface. This leads to thermal nonuniformities at the melt. Three-dimensional direct simulation Monte Carlo simulations were performed with the aim of quantifying the effect of such spatial variations of source temperature in thin film depositions using an electron-beam physical vapor deposition system. The source temperature distribution from a typical deposition process was used in the direct simulation Monte Carlo simulations performed for various mass flow rates. The use of an area-averaged temperature is insufficient for all mass flow rates due to the highly nonlinear relationship between temperature and saturation number density, and hence, the mass flux. The mass flow rate equivalent temperature was determined, and the simulations performed with this temperature were compared with those corresponding to the actual nonuniform temperature distribution. For low mass flow rates, the growth rates depend very weakly on the spatial variation of temperature as long as an equivalent temperature corresponding to the same mass flow rate was used. However, as the mass flow rate increases, the error associated with this approximation increases. For deposition processes with source Knudsen numbers less than 0.05, it is not possible to account for the spatial nonuniformities in temperature using the total mass flow rate without significant errors. For a given mass flow rate, the errors associated with using an equivalent temperature decrease with increasing collector plane distance since the flow is allowed to expand further, thereby decreasing the effects of slit temperature nonuniformities.

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Ion Implantation

Walter

Nastasi

2000

Kirk-Othmer Encyclopedia of Chemical Technology

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Ion implantation has been used as a research tool since about 1960, as an indispensable part of integrated circuit production since the mid‐1960s, and as a method for beneficially modifying surface sensitive properties since the early 1970s. Ion implantation processes are known to be low temperature (if desired), highly controllable, and reproducible processes capable of exceeding thermodynamic constraints on the types of materials created at, or on, a material's surface. Outside the traditional semiconductor applications for the introduction of dopants into silicon, ion implantation technology has found other applications as a method for modifying the mechanical or chemical properties of material surfaces. In this article the fundamental underlying physical concepts of ion implantation are reviewed, namely, ion stopping, ion range, implanted concentration, channeling, radiation damage, radiation enhanced diffusion, and sputtering. A brief overview of the application of ion implantation to problems in tribology, fatigue, catalysis, and corrosion is provided. As further advances in both the application and the technology of ion implantation are made, and the economic values become realized, interest in ion implantation processes is expected to expand rapidly. In response to anticipated future interest, the state of ion implantation technology and the economic issues associated with the application of ion implantation technology at the industrial level are discussed. Vol. 14, pp. 783–814, 203 refs. to April 1994.

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Cited by 6 publications

References 13 publications

Surface Chemistry in the Chemical Vapor Deposition of Electronic Materials

Surface Chemistry in the Chemical Vapor Deposition of Electronic Materials

Direct simulation Monte Carlo study of effects of thermal nonuniformities in electron-beam physical vapor deposition

Ion Implantation

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