2012
DOI: 10.1016/j.mssp.2012.05.010
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Overview and status of bottom-up silicon nanowire electronics

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Cited by 32 publications
(23 citation statements)
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“…32,33 The bottom-up fabrication is simple and cost-effective. However, it has difficulties concerning position and shape control.…”
Section: Introductionmentioning
confidence: 99%
“…32,33 The bottom-up fabrication is simple and cost-effective. However, it has difficulties concerning position and shape control.…”
Section: Introductionmentioning
confidence: 99%
“…SiNW [38]. Although SiNW FETs present ultra-sensitive and label-free electrical detection of biomolecules in real-time, less consideration on biological multiplexing is less given due to the greater focus of current research on the production and analysis of FET devices.…”
Section: Silicon Nanowirementioning
confidence: 99%
“…For miniaturised biosensors Si nanowires boast excellent electrical and mechanical properties which, combined with their high surface area to volume ratio, make them attractive candidates for applications such as field effect transistors (FETs) [18,19] and sensing devices [20,21]. Research into the use of SiNWs as FET-type sensors began by using chemically grown NWs [20].…”
Section: Background To the Nanowire-enabled Sinaps Motementioning
confidence: 99%