Overview of 1.2kV – 2.2kV SiC MOSFETs targeted for industrial power conversion applications

Abstract

This paper presents the latest 1.2kV-2.2kV SiC MOSFETs designed to maximize SiC device benefits for highpower, medium voltage power conversion applications. 1.2kV, 1.7kV and 2.2kV devices with die size of 4.5mm x 4.5mm were fabricated, exhibiting room temperature on-resistances of 34mOhm, 39mOhm and 41mOhm, respectively. The ability to safely withstand single-pulse avalanche energies of over 17J/cm 2 is demonstrated. Next, the 1.7kV SiC MOSFETs were used to fabricate half-bridge power modules. The module typical onresistance was 7mOhm at Tj=25 o C and 11mOhm at 150 o C. The module exhibits 9mJ turn-on and 14mJ turn-off losses at Vds=900V, Id=400A. Validation of GE's SiC MOSFET performance advantages was done through continuous buckboost operation with three 1.7kV modules per phase leg exhibiting 99.4% efficiency. Device ruggedness and tolerance to terrestrial cosmic radiation was evaluated. Experimental results show that higher voltage devices (2.2kV and 3.3kV) are more susceptible to cosmic radiation, requiring up to 45% derating in order to achieve module failure rate of 100 FIT, while 1.2kV MOSFETs require only 25% derating to deliver similar FIT rate. Finally, the feasibility of medium voltage power conversion based on series connected 1.2kV SiC MOSFETs with body diode is demonstrated.

A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

“…Although the claimed superior performance of SiC power devices over traditional Si devices has been the major driving force for most applications, the ability to withstand stressful and harsh conditions may alter the attitude of this conclusion. For instance, prior-art research on the Short Circuit (SC) capability of 1.2 kV SiC MOSFETs has indirectly proved so [3]- [10]. The static and dynamic performances of SiC MOSFETs have been compared to Si IGBTs in [7], [11] and to Si MOSFETs in [11], [12], where the advantages of WBG devices have been demonstrated (i.e., lower losses, higher operation temperature).…”

Accelerated Tests on Si and SiC Power Transistors with Thermal, Fast and Ultra-Fast Neutrons

“…Figure 5 shows the FIT results at sea level versus the bias drain voltage (at V GS = 0 V) of SiC MOSFETs with their 95% confidence intervals. For comparison, in the same figure, the data of the commercial SiC MOSFETs C2M0080120D-rating 1200 V (Cree), SCT20N120-1200 V (STMicroelectronics), SCT2120AFC-650 V (ROHM) reported in [13], and GE-1200 V (GE) from [27] are shown. Data of the commercial SiC MOSFETs C2M0080120D, SCT20N120-1200 V, and SCT2120AFC-650 V from [13] and GE-1200 V from [27].…”

Analysis and Cell-Level Experimental Verification of a 25 kW All-SiC Isolated Front End 6.6 kV/400 V AC-DC Solid-State Transformer

“…In a cascaded cells system, the number of required cells follows from the peak phase voltage, , the semiconductor blocking voltage capability, V b,MV , and its utilization, u, as (1) With n cell = 5, the considered 1700 V SiC MOSFETs are utilized to about 65%, which is feasible regarding reliability [22]. 1) Transformer: Assuming unity power factor operation, the instantaneous power of the single-phase system at the SST's AC side is (2) Hence, the transformer RMS current of the IFE converter cell can be derived starting with the relation (3) where x denotes a local average value over half a switching cycle of the SRC.…”