Overview of Current Compliance Effect on Reliability of Nano Scaled Metal Oxide Resistive Random Access Memory Device

Napolean, A.; Sivamangai, N. M.; Samuel, Joel; John, Vimukth

doi:10.1109/icdcsyst.2018.8605178

Cited by 6 publications

(4 citation statements)

References 65 publications

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“…However, a minimum of 1 mA I CC is essential for the rest devices. The lower I CC in the ISHI-1 device leads to its higher resistance in comparison to the other devices [28][29][30][31] . Although, the individual set/ reset voltages of ISHI-1 are slightly higher than some of the other devices.…”

Section: Resultsmentioning

confidence: 94%

All oxide based flexible multi-folded invisible synapse as vision photo-receptor

Chen

Panda

Tseng

2023

Sci Rep

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All oxide-based transparent flexible memristor is prioritized for the potential application in artificially simulated biological optoelectronic synaptic devices. SnOx memristor with HfOx layer is found to enable a significant effect on synaptic properties. The memristor exhibits good reliability with long retention, 104 s, and high endurance, 104 cycles. The optimized 6 nm thick HfOx layer in SnOx-based memristor possesses the excellent synaptic properties of stable 350 epochs training, multi-level conductance (MLC) behaviour, and the nonlinearity of 1.53 and 1.46 for long-term potentiation and depression, respectively, and faster image recognition accuracy of 100% after 23 iterations. The maximum weight changes of -73.12 and 79.91% for the potentiation and depression of the synaptic device, respectively, are observed from the spike-timing-dependent plasticity (STDP) characteristics making it suitable for biological applications. The flexibility of the device on the PEN substrate is confirmed by the acceptable change of nonlinearities up to 4 mm bending. Such a synaptic device is expected to be used as a vision photo-receptor.

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Section: Resultsmentioning

confidence: 94%

All oxide based flexible multi-folded invisible synapse as vision photo-receptor

Chen

Panda

Tseng

2023

Sci Rep

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“…This can be achieved by artificially setting a lower current compliance, which, in turn, leads to the undesirable memory window shrink. Since high current compliance will lead to the formation of the conductive filament (CF) with a greater area, more traps can be accommodated indicating the dominance of the random telegraph noise (RTN) [ 31 ]. As a result, at the depressed current range, an evident tradeoff between variability and memory window size is expected.…”

Section: Resultsmentioning

confidence: 99%

Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode

Alimkhanuly

Kim

et al. 2020

Nanomaterials

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Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. For this reason, a cost-effective 3D vertical RRAM (VRRAM) structure which requires a single pivotal lithography step is attracting significant attention from both the scientific community and the industry. Integrating an extremely thin plane electrode to such a structure is a difficult but necessary step to enable high memory density. In addition, experimentally verifying and modeling such devices is an important step to designing RRAM arrays with a high noise margin, low resistive-capacitive (RC) delays, and stable switching characteristics. In this work, we conducted an electromagnetic analysis on a 3D vertical RRAM with atomically thin graphene electrodes and compared it with the conventional metal electrode. Based on the experimental device measurement results, we derived a theoretical basis and models for each VRRAM design that can be further utilized in the estimation of graphene-based 3D memory at the circuit and architecture levels. We concluded that a 71% increase in electromagnetic field strength was observed in a 0.3 nm thick graphene electrode when compared to a 5 nm thick metal electrode. Such an increase in the field led to much lower energy consumption and fluctuation range during RRAM switching. Due to unique graphene properties resulting in improved programming behavior, the graphene-based VRRAM can be a strong candidate for stacked storage devices in new memory computing platforms.

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“…The CC level can be used to modify the conductance of the RRAM structure. This is probably due to the fact that a higher CC increases the size or number of conductive filaments (CF) within the structure [43]. For small CC values, this effect is less pronounced.…”

Section: Measurementsmentioning

confidence: 99%

Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements

et al. 2021

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In this study, the resistive switching phenomenon in Al/SiO2/n++-Si structures is observed and studied by means of DC, small-signal admittance, and complex impedance spectroscopy measurements. Possible transport mechanisms in the high and low resistance states are identified. Based on the results of the applied measurement techniques, an electrical equivalent circuit of the structure is proposed. We discuss the effect of parasitic elements influencing the measurement results and show that a proper model can give useful information about the electrical properties of the device. A good agreement between the characteristics of the proposed equivalent circuit and the experimental data, based on different measurement procedures, confirms the validity of the used methodology and its applicability to the electrical characterization of RRAMs.

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Overview of Current Compliance Effect on Reliability of Nano Scaled Metal Oxide Resistive Random Access Memory Device

Cited by 6 publications

References 65 publications

All oxide based flexible multi-folded invisible synapse as vision photo-receptor

All oxide based flexible multi-folded invisible synapse as vision photo-receptor

Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode

Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements

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