Overview of emerging semiconductor non-volatile memories

Fujisaki, Yasumasa

doi:10.1587/elex.9.908

Cited by 25 publications

(16 citation statements)

References 37 publications

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“…Among different types of switching mechanisms the electrochemical metallization memories (ECM) demonstrate advantages of potential multi-bit storage4, nanosecond-ranged switching time5 and low power consumption6. The structure of the memory cell is simple to fabricate and consists of two electrodes with solid electrolyte in-between; the active (oxidizable) electrode is typically Ag or Cu and an inert (not dissolvable) material such as Pt, Ir, W or TiN are used as auxiliary electrode.…”

mentioning

confidence: 99%

Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

Cho

Tappertzhofen

Waser

et al. 2013

Sci Rep

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AgI nanoionics-based resistive switching memories were studied in respect to chemical stability of the Ag/AgI interface using x-ray absorption spectroscopy. The apparent dissolution of Ag films of thickness below some tens of nanometers and the loss of electrode/electrolyte contact was critically addressed. The results evidently show that there are no chemical interactions at the interface despite the high ionic mobility of Ag ions. Simulation results further show that Ag metal clusters can form in the AgI layer with intermediate-range order at least up to next-next nearest neighbors, suggesting that Ag can permeate into the AgI only in an aggregated form of metal crystallite.

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mentioning

confidence: 99%

Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

Cho

Tappertzhofen

Waser

et al. 2013

Sci Rep

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“…This is because FeRAM requires neither a refresh process, which is indispensable for DRAM, nor the transfer of the electrons across a high-energy barrier, which is required by flash memory. Hence, FeRAM allows for a writing voltage of less than 2 V against NAND flash, which requires a writing/ erasing voltage of approximately 20 V. [85] Because of this advantage, there is no need for FeRAM to have a voltage pump-up circuit, which is required for flash memory. In addition, as the charge pump, which takes a considerable time to build up the current, is eliminated in FeRAM, FeRAM has realized a write speed of a few nanoseconds compared to flash memory, with a write speed of the order of a few milliseconds.…”

Section: Ferroelectric Random Access Memorymentioning

confidence: 99%

Physical principles and current status of emerging non-volatile solid state memories

Wang

Yang

Wen

2015

Electron. Mater. Lett.

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Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for the next generation of data-storage devices based on a comparison of their performance.

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“…Recently, two-terminal based resistance random access memory (RRAM), phase change RRAM (PC-RAM), and spin-torque magnetoresistive RAM (ST-MRAM), based on resistive switching (RS) phenomena, have been widely investigated [1,2,3]. Among them, RRAM is considered as one of the most competitive candidates for next-generation nonvolatile memories, due to the simple structure, low power consumption, long retention nondestructive readout, good complementary metal oxide semiconductor (CMOS) compatibility and high density integration.…”

Section: Introductionmentioning

confidence: 99%

An efficient stream cipher for resistive RAM

Yun

Park

Shin

et al. 2017

IEICE Electron. Express

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Resistive Random Access Memory (RRAM) is considered as one of the most competitive candidate for next-generation embedded system memories but data security for it has not yet been studied in detail. Since data security of embedded system is becoming more and more important nowadays, we think that it is necessary to study about data encryption for RRAM. In this paper, we studied data encryption candidates for RRAM and conducted several stream ciphers performance experiments for RRAM. As a consequence, we showed that Trivium is the most suitable stream cipher algorithm for RRAM. Also, we analyzed the experimental results. Keywords: RRAM (resistive RAM), embedded system, Trivium, data encryption, stream cipher Classification: Circuits and modules for storage

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Overview of emerging semiconductor non-volatile memories

Cited by 25 publications

References 37 publications

Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

Physical principles and current status of emerging non-volatile solid state memories

An efficient stream cipher for resistive RAM

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