Overview of Optical Diagnostics

Herman, Irving P.

doi:10.1016/b978-012342070-1/50002-4

Cited by 11 publications

(5 citation statements)

References 49 publications

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“…A Kramers–Kronig consistent B-Spline fitting method was chosen to extract the optical constants of the DA InGaAs due to its flexibility and accuracy of approximating optical constants . For the ellipsometry measurement, the polarization change (ρ) of the reflected light is expressed as the ratio of its parallel ( r p ) and perpendicular ( r s ) components ρ = r normalp r normals = tan ( ψ ) e i normalΔ where ψ and Δ are the amplitude ratio and the phase difference of parallel ( r p ) and perpendicular ( r s ) components of the reflected light, respectively. , …”

Section: Resultsmentioning

confidence: 99%

Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection

Guo,

Liang,

Zheng

et al. 2024

ACS Photonics

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The InGaAs lattice-matched to InP has been widely deployed as the absorption material in short-wavelength infrared photodetection applications such as imaging and optical communications. Here, a series of digital alloy (DA)-grown InAs/GaAs short-period superlattices were investigated to extend the absorption spectral range. The scanning transmission electron microscopy, high-resolution X-ray diffraction, and atomic force microscopy measurements exhibit good material quality, while the photoluminescence (PL) spectra demonstrate a wide band gap tunability for the InGaAs obtained via the DA growth technique. The photoluminescence peak can be effectively shifted from 1690 nm (0.734 eV) for conventional random alloy (RA) InGaAs to 1950 nm (0.636 eV) for 8 monolayer (ML) DA InGaAs at room temperature. The complete set of optical constants of DA InGaAs has been extracted via the ellipsometry technique, showing the absorption coefficients of 398, 831, and 1230 cm −1 at 2 μm for 6, 8, and 10 ML DA InGaAs, respectively. As the period thickness increases for DA InGaAs, a red shift at the absorption edge can be observed. Furthermore, the simulated band structures of DA InGaAs via an environment-dependent tight binding model agree well with the measured photoluminescence peaks, which is advantageous for a physical understanding of band structure engineering via the DA growth technique. These investigations and results pave the way for the future utilization of the DA-grown InAs/GaAs short-period superlattices as a promising absorption material choice to extend the photodetector response beyond the cutoff wavelength of random alloy InGaAs.

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Section: Resultsmentioning

confidence: 99%

Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection

Guo,

Liang,

Zheng

et al. 2024

ACS Photonics

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“…11,12 Two types of passive ranging systems have been developed. One is based on range estimation and the modification of the optical portion of the system to have an OTF with periodically spaced zeros.…”

Section: Resultsmentioning

confidence: 99%

“…Previously, it has been demonstrated that the OSNR could be measured by linearly interpolating the ASE noise level at the carrier wavelength [10]- [11]. However, in a dynamically reconfigurable WDM network, each channel may traverse through different route and different number of optical amplifiers.…”

Section: Osnr Monitoring Techniquesmentioning

confidence: 99%

“…However this gates are much better suted for high speed OTDM demultiplexing [10] than for 3R regeneration which requires a gate with a well shape rectangular window when switching data pulses are somewhat large. Other high speed and well shaped optical gates are SOA-based Mach-Zehnder or Michelson interferometers [11,12], which can be data driven with polarisation independence up to 40 Gbit/s, with excellent performances [13]. Main features of interferometric nonlinear gates are signal extinction ratio enhancement and noise variance reduction.…”

Section: Semiconductor Based Optical Gatesmentioning

confidence: 99%

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2000 IEEE/LEOS Summer Topical Meeting-Electronic-Enhanced Optics, Held 24-16 July 2000 at Aventura, Florida

Shumate¹

2000

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“…From [ 25 ], it can be understood that both lines are featured by direct electron impact excitations with known process cross-sections [ 25 ] as well as exhibit very low lifetimes for corresponding excited states. The latter allows one to neglect their collisional relaxation pathway while the standard actinometrical approach [ 25 , 26 ] yields.

where

is the fluorine atom density,

is the total gas density at the given gas temperature

, and

is the actinometric coefficient.…”

Section: Experimental and Modeling Detailsmentioning

confidence: 99%

On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF4, CHF3, and C4F8 Gases Mixed with Oxygen

et al. 2023

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In this work, we discuss the effects of component ratios on plasma characteristics, chemistry of active species, and silicon etching kinetics in CF4 + O2, CHF3 + O2, and C4F8 + O2 gas mixtures. It was shown that the addition of O2 changes electrons- and ions-related plasma parameters rapidly suppresses densities of CFx radicals and influences F atoms kinetics through their formation rate and/or loss frequency. The dominant Si etching mechanism in all three cases is the chemical interaction with F atoms featured by the nonconstant reaction probability. The latter reflects both the remaining amount of fluorocarbon polymer and oxidation of silicon surface.

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Overview of Optical Diagnostics

Cited by 11 publications

References 49 publications

Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection

Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection

2000 IEEE/LEOS Summer Topical Meeting-Electronic-Enhanced Optics, Held 24-16 July 2000 at Aventura, Florida

On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF4, CHF3, and C4F8 Gases Mixed with Oxygen

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