Overview of the Eaton NV-8200P high beam purity, parallel scanning implanter

Ray, A.; Dykstra, Jerald P.; Simonton, Robert B.

doi:10.1016/b978-0-444-89994-1.50086-7

Cited by 12 publications

(3 citation statements)

References 3 publications

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“…All ribbon beam or ribbon-like beam implanters today use a magnetic or electrostatic lens to image ions to infinity after they diverge in one plane from a waist near the focal point of the lens [1][2][3]5]. The focal lengths of these lenses are in the range of 600 to 1000 mm.…”

Section: Sources Of Variabilitymentioning

confidence: 99%

“…While this was adequate angle control for devices at that time and these tools are still in use today, it became clear that 200 mm wafers would need better angle control. Parallel beam implanters were introduced to avoid the scan angle variation [1][2][3]. These offered implant angle control of <1, which was satisfactory for devices until recently.…”

Section: Introductionmentioning

confidence: 99%

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Implant Angle Control on Optima MD

Rathmell¹,

Vanderberg²,

Ray³

et al. 2006

AIP Conference Proceedings

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Implant angle control is increasingly important with each new device node. Some devices have demonstrated a sensitivity of threshold voltage of about 100 mV/deg for implant angle and require implant angles to be held within +/-0.2 for process control. There are many sources of angle variation in single wafer implanters. Mechanical orientation can usually be controlled to high precision, but an accurate control of the implant angle requires knowledge of the actual beam angle relative to the surface or crystal planes of the wafer. In-situ methods to measure beam angles in both the horizontal and vertical planes are required and it is necessary that these methods be calibrated to the surface or crystal planes of the wafer to achieve the required angle control. Optima MD has incorporated methods to automatically measure beam angles prior to implant in both planes, and correct for any deviation from the desired implant angle. The symmetric parallelizing lens that corrects angles without bending the beam enables a method of calibrating the horizontal angle mask to crystal planes with one or two wafers. This paper discusses the methods of measurement, calibration, and accuracy of the Optima MD angle control system.

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Section: Sources Of Variabilitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Implant Angle Control on Optima MD

Rathmell¹,

Vanderberg²,

Ray³

et al. 2006

AIP Conference Proceedings

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“…The Eaton 8250 medium current implanter uses hybrid electrostatic and mechanical scanning to implant wafers up to 200 mm in diameter with the requested implant angle within +/-0.5" in both the horizontal and vertical planes [3,4]. The wafer is scanned mechanically in the vertical direction such that the beam strikes all parts of the wafer at the same point relative to beam transport at all tilt angles.…”

Section: Introductionmentioning

confidence: 99%

Beam parallelism in the 8250 medium current implanter

Rathmell

Kamenitsa²,

King³

et al.

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)

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Small variations in beam angle across the wafer can affect the apparent dose uniformity and implant depth under conditions where channeling of the implanted ions is possible. The depth profile of the implanted species can vary significantly under certain crystal orientations even with beam angle variations as small as +I-0.5 degrees. This leads to non-uniformity in the measurements made with thermal wave or sheet resistance probes. The 8250 uses a secondgeneration design of the electrostatic scanning and parallelizing lens to produce a horizontally scanned beam in which the average beam angle at any point on the wafer is typically the same within 0.2 degrees. This paper describes the method of measurement of the beam angles and shows the effect of small angle variation on implanted wafers.

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Range Distribution

Rimini¹

1995

Ion Implantation: Basics to Device Fabrication

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Overview of the Eaton NV-8200P high beam purity, parallel scanning implanter

Cited by 12 publications

References 3 publications

Implant Angle Control on Optima MD

Implant Angle Control on Optima MD

Beam parallelism in the 8250 medium current implanter

Range Distribution

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