Overview of the MAGNUS project

Duême, P.; Mallet-Guy, Benoit; Mancuso, Y.; Billström, Niklas; Tolant, C.; Brouzes, H.; Schuh, Patrick; Hone, David W. E.; Fazaldin, Rashid

doi:10.1109/eumic.2016.7777550

Cited by 3 publications

(1 citation statement)

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“…High-power handling capabilities of GaN devices are advantageous for high-power amplifiers (HPA) [1][2][3], but also for switches [4,5] and robust LNAs [6,7]. All these devices are key components for T/R modules in AESA applications.…”

Section: Introductionmentioning

confidence: 99%

GaN-based single-chip frontend for next-generation X-band AESA systems

Schuh

Sledzik

Reber

2018

Int. J. Microw. Wireless Technol.

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A next generation of active electronically scanned array (AESA) antennas will be challenged with the need for lower size, weight, power, and cost. This leads to enhanced demands especially with regard to the integration density of the radio frequency-part inside aT/Rmodule. The semiconductor material GaN has proven its capacity for high-power amplifiers (HPA), robust receive components as well as switch components for separation of transmit and receive mode. This paper will describe the design and measurement results of a GaN-based single-chipT/Rmodule frontend (HPA, low noise anplifier, and single-pole double-throw (SPDT)) using UMS GH25 technology and covering the frequency range from 8 GHz to 12 GHz. The key performance parameters of the frontend are 13 W minimum transmit (TX) output power over the whole frequency range with peak power up to 17 W. The frontend in receive (RX) mode has a noise figure below 3.2 dB over the whole frequency range, and can survive more than 5 W input power. The large signal insertion loss of the used SPDT is below 0.9 dB at 43 dBm input power level.

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