2017
DOI: 10.1116/1.4975144
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Oxidation and oxidative vapor-phase etching of few-layer MoS2

Abstract: Understanding oxidation of layered chalcogenide semiconductors is important for device processing, as oxidation can be both an intentional and unintentional result of processing steps. Here, the authors investigate chemical and morphological changes in mechanically exfoliated few-layer MoS2 in oxidizing and inert environments using different microscopies (optical, scanning electron, and atomic force) and spectroscopy (Raman, x-ray photoelectron, and Auger electron) techniques. The environments studied were oxy… Show more

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Cited by 43 publications
(83 citation statements)
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“…S12). A recent study has shown that substoichiometric MoO 3− x can be volatile and even removed by Ar flow at low temperatures ( 36 ). In the O 2 /Ar plasma physical sputtering–dominated regime, the surface roughness is seen to increase by more than 1 nm at 28 s of exposure due to Ar + -related etching and redeposition of material on the surface ( 15 , 16 ).…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…S12). A recent study has shown that substoichiometric MoO 3− x can be volatile and even removed by Ar flow at low temperatures ( 36 ). In the O 2 /Ar plasma physical sputtering–dominated regime, the surface roughness is seen to increase by more than 1 nm at 28 s of exposure due to Ar + -related etching and redeposition of material on the surface ( 15 , 16 ).…”
Section: Resultsmentioning
confidence: 99%
“…S20). It has been demonstrated that oxygen plasma interaction with molybdenum metal leads to the creation of volatile Mo oxides ( 50 ), whereas a recent study has confirmed oxide volatility in oxidized MoS 2 ( 36 ). We find that the plasma-formed oxide phase studied presently is volatile under ultrahigh vacuum (UHV).…”
Section: Resultsmentioning
confidence: 99%
“…It has been confirmed both experimentally and theoretically that bulk MoS 2 oxidation is not readily observed at ambient conditions due to high energy barriers for such reactions [ 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 ]. Nevertheless, all kinds of thin and thick microscopic MoS 2 crystals are etched by oxygen within the time scales of minutes when heated to temperatures of at least 320 °C.…”
Section: Introductionmentioning
confidence: 98%
“…Direct modification of MoS2 has mainly been carried out by physical (e.g., sputtering) or chemical modification schemes involving etching in reductive, oxidative or water environments or plasma treatments [35][36][37]. Etching of MoS2 in an oxidative environment takes place from the edge sites or at grain boundaries rather than on the pristine basal plane [35,[37][38][39][40][41], and the resulting materials degradation may present a problem for successful basal plane functionalization of devices or nanomaterials consisting of well-defined MoS2 nanostructures. The free-standing single-layer MoS2 edges tend to oxidize orders of magnitude faster than the basal plane, and this is in general attributed to the lower coordination and more exposed geometry of the edge Mo atoms compared with the basal plane [42].…”
Section: Introductionmentioning
confidence: 99%