2017
DOI: 10.1016/j.ceramint.2017.03.129
|View full text |Cite
|
Sign up to set email alerts
|

Oxidation behaviors of ZrB 2 –SiC binary composites above 2000 °C

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
6
0
2

Year Published

2018
2018
2024
2024

Publication Types

Select...
8

Relationship

2
6

Authors

Journals

citations
Cited by 46 publications
(8 citation statements)
references
References 36 publications
0
6
0
2
Order By: Relevance
“…4,[14][15][16][17][18][19][20][21][22] However, SiC reacts with oxygen to form gaseous SiO, and SiO 2 begins to decompose at temperatures above 1800 • C, accelerating the recession through the oxidation of Si-containing materials. 17,19,23 To develop advanced aerospace heat-resistant materials for use above 1800 • C, a novel design concept for Si-free materials to prevent recession caused by oxidation is required.…”
Section: Introductionmentioning
confidence: 99%
“…4,[14][15][16][17][18][19][20][21][22] However, SiC reacts with oxygen to form gaseous SiO, and SiO 2 begins to decompose at temperatures above 1800 • C, accelerating the recession through the oxidation of Si-containing materials. 17,19,23 To develop advanced aerospace heat-resistant materials for use above 1800 • C, a novel design concept for Si-free materials to prevent recession caused by oxidation is required.…”
Section: Introductionmentioning
confidence: 99%
“…The authors fabricated C/ZrB 2 -SiC-ZrC composites by Si and Si-ZrSi 2 eutectic with a melting temperature of~1380 • C. However, severe degradation occurs during heat exposure at 1700 • C in air since the eutectic mixture melts and flows toward the outside of the composites under dynamic pressure [11,25]. Moreover, SiO(g) is formed by the oxidation of Si and/or SiC, which is not desirable for UHTC matrix composites exposed to temperatures above 2000 • C, since a SiO 2 (l) layer, which is well known as a barrier to oxygen diffusion, is not formed on the surface by the oxidation of Si and/or SiC [26,27]. Since SiO(g) is a gaseous species, the oxidation of Si and/or SiC causes the formation of a porous layer and the oxidized region is delaminated from the porous region [3,4,28,29].…”
Section: Introductionmentioning
confidence: 99%
“…However, pure ZrB 2 ceramic will be oxidized rapidly above 1200 °C due to the generated B 2 O 3 evaporating rapidly, which makes substrate exposes to the environment. [7,8] With the addition of SiC, ZrB 2 -SiC ceramics show better oxidation resistance due to the formation of stable glassy SiO 2 oxide layer which can flow and prevent the entry of oxygen. [9] In addition, the mechanical properties of ZrB 2 -based ceramics such as bending strength and fracture toughness can be improved by adding SiC.…”
mentioning
confidence: 99%