Oxidation of Low-Pressure-Chemical-Vapour Deposited Silicon Oxynitride Films

Kuiper, A. E. T.; Willemsen, M.F.C.; Mulder, J.; Elferink, J. B. Oude; Erens, R.; Habraken, F.H.P.M.; Weg, W. F. van der

doi:10.1007/978-3-642-76593-3_3

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“…On the other hand hydrogen may have negative effects because it may become 0-7803-6666-2/01/$10.00 © 2001 IEEE mobile and modify the (micro)structure of the material. Similarly, the presence of H may increase the reactivity of the material as for instance in the oxidation of silicon nitride and oxynitride films [3].…”

Section: Introductionmentioning

confidence: 99%

Hydrogen related effects in semiconductor layers

Habraken

Arnoldbik²,

Brockhoff³

et al.

2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547)

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In low temperature processed amorphous silicon and its alloys like silicon nitride and carbide the presence and the behavior of hydrogen is of utmost importance for the applicability of these materiall!: Besides to beneficially passivate Si dangling bond defects, hydrogen increases the reactivity of these materials and is a cause for instability. In this review we discuss examples of the study of the migration of single and molecular hydrogen inside the material as distinct steps in the process of effusion of H from the plasma deposited films. Also examples of the reverse process i.e. the uptake of hydrogen during a post deposition hydrogen treatment or during the deposition itself are presented.In these studies fruitfully use is made of (bi)layer structures in which hydrogenated and deuterated materials are spatially separated. We apply -MeV ion beam t. echniques to measure concentration depth profiles of Hand D. The high energy ion beams are also used to provoke molecule formation in the material, enabling in a novel manner the study of the permeability of thin films for H2 and D2 at relatively low temperature.

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Section: Introductionmentioning

confidence: 99%