Oxidation Process of SiC by RTP Technique

Abstract

The kinetics of 4H-SiC thermal oxidation by RTP technique and the properties of thin thermal oxide was reported. The thickness of the thermal oxide was determined by spectroscopic ellipsometry and confirmed by electrical measurements. The conductance method was applied to analyse the surface states parameters. The lifetime, density and cross-section of the surface traps were extracted for as-fabricated MOS capacitors and after thermal annealing processes.

Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs

“…A considerable triode-current variation (i.e., R ON drift) is present in correspondence with the last stress cycle, in which a slight I DS increase (see inset of Figure 6b) is a signature of decreased R ON . The negative V TH shift observed in Figure 5a is consistent with the I DS curve shift in Figure 6b after 1000 s. These negative drifts could be potentially explained by the presence of traps at the SiC/SiO 2 interface [18][19][20] and the long transients observed could be a signature of charge emission dynamics.…”

“…By applying the proposed measurement method on commercially available devices (i.e., TO-247 vertical SiC MOSFETs), it was possible to test the effectiveness of the setup and to provide a qualitative interpretation of the physical mechanisms leading to the observed V TH and R ON drifts. Particularly, negative drifts (i.e., decrease) were observed for both V TH and R ON , that can be ascribed to the presence of traps at the SiC/SiO 2 interface [18][19][20].…”