Oxidation Properties of Hydrogen-Terminated Si(001) Surfaces Following Use of a Hyperthermal Broad Atomic Oxygen Beam at Low Temperatures

Abstract

The oxidation properties of an H-terminated Si(001) surface following the use of a hyperthermal broad atomic oxygen beam have been studied at low temperatures. Effects of sample temperature, flux and energy of the impinging atomic oxygen on the oxidation of silicon were investigated by X-ray photoelectron spectroscopy. It was confirmed that oxide growth at the surface was achieved even at room temperature and the oxide thickness reached a terminal thickness of a few nanometers depending upon the oxidation conditions. The oxidation process was divided into two stages: the fast oxidation stage and the subsequent slow oxidation stage. It was also confirmed that the reaction yield of atomic oxygen with Si increased with increasing translational energy. The characteristic feature of beam oxidation was explained by the effect of energy accommodation from the impinging oxygen atom to the surface silicon atom.

Degradation on a mechanical property of high-modulus aramid fiber due to hyperthermal atomic oxygen beam exposures

“…This facility equipped with a laser detonation atomic oxygen beam source, which was originally designed by Physical Sciences Inc., as a hyperthermal atomic oxygen source [5]. Detail of the atomic oxygen beam source used in this study was explained elsewhere [8,10]. The ultimate vacuum pressure of the chamber was 2 · 10 À5 Pa. An impinging velocity of atomic oxygen (8 km/s) can be simulated in this type of atomic oxygen source and hyperthermal broad atomic oxygen beam with kinetic energy of approximately 5 eV was obtained in this study in order to expose the sample.…”

A reaction-diffusion model for atomic oxygen interacting with spacecraft surface protective materials in low earth orbit environment

“…[10], the curves are readily fitted for the silicon oxide layer growth vs. the AO translational kinetic energy K AO , flux F AO , temperature T AO , and tangential flux F T as depicted, respectively, in Figures 4 to 7, and the associated tables for the diffu- Table 3 Temperature dependence 6 Results and discussions reveal the good agreement between the theoretical curves and experimental data. According to Tables 1-4, the following four dependencies related to the oxide thickness are to be explained qualitatively.…”

“…[10] (8.17-17 nm 2 /s). The authors could not distinguish between the equilibrium concentration C * of oxidant in the oxide and the number of oxidant species contained in the silica per unit volume.…”

“…Ground simulation experiments have been conducted on the reaction-diffusion of AO in the silicon surface since 1980s [4][5][6][7][8][9][10] . Numerical simulations, however, have come with a late start.…”

Resistance of Hydrogenated Titanium-Doped Diamond-Like Carbon Film to Hyperthermal Atomic Oxygen

“…The hydrogenated Ti-DLC films were exposed to hyperthermal atomic oxygen by a laser-detonation beam apparatus [12,30,31]. Pure oxygen gas was introduced into the nozzle throat through a pulsed supersonic valve.…”